SKIM609GAL12E4_11

SKiM609GAL12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Ts = 25 °C Ts = 70 °C 1200 748 608 600 1800 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Ts = 25 °C Ts = 70 °C 139 110 600 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1800 900 -40 ... 175 Ts = 25 °C Ts = 70 °C 1397 1107 1350 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 4050 6480 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 700 -40 ... 125 2500 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SKiM® 93 Trench IGBT Modules SKiM609GAL12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor VGES tpsc Tj IF IFnom IFRM IFSM Tj Inverse diode Tj = 175 °C Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint Conditions IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C Tj = 25 °C Tj = 150 °C min. typ. 1.85 2.25 0.8 0.7 1.8 2.6 max. 2.10 2.45 0.9 0.8 2.0 2.8 6.5 0.3 Unit V V V V m m V mA mA nF nF nF nC  VGE=VCE, IC = 24 mA Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 5 5.8 0.1 35.20 2.32 1.88 3400 1.3 GAL © by SEMIKRON Rev. 3 – 14.07.2011 1 SKiM609GAL12E4 Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-s) Conditions VCC = 600 V IC = 600 A VGE = 15 V RG on = 4.1  RG off = 4.1  di/dton = 5000 A/µs di/dtoff = 4400 A/µs per IGBT Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C IF = 150 A Tj = 150 °C di/dtoff = 3300 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 5300 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C min. typ. 150 121 136 808 100 83 max. Unit ns ns mJ ns ns mJ SKiM 93 Trench IGBT Modules SKiM609GAL12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor ® 0.068 2.1 2.1 1.1 0.7 4.3 6.7 1.3 0.9 5.6 7.8 153 15 9 0.501 1.7 1.4 1.1 0.7 0.5 0.7 1.3 0.9 0.6 0.9 510 123 39 0.048 10 15 1.9 1.7 1.5 1.1 0.7 0.9 2.5 2.4 1.5 1.1 6.4 8.5 K/W V V V V m m A µC mJ K/W V V V V m m A µC mJ K/W nH m m g  K Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-s) Freewheeling diode VF = VEC IF = 600 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-s) Module LCE RCC'+EE' w Temperatur Sensor R100 B100/125 terminal-chip Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Ts = 25 °C Ts = 125 °C 0.3 0.5 1042 TSensor = 100 °C (R25 = 5 k) R(T) = R100exp[B100/125(1/T-1/373)]; T[K]; 339 4096 GAL 2 Rev. 3 – 14.07.2011 © by SEMIKRON SKiM609GAL12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 14.07.2011 3 SKiM609GAL12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 3 – 14.07.2011 © by SEMIKRON SKiM609GAL12E4 SKIM 93 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 3 – 14.07.2011 5