SKM100GAL12T4

SKM100GAL12T4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 150 °C Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 160 123 100 300 -20 ... 20 10 -40 ... 175 121 91 100 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 300 550 -40 ... 175 Tc = 25 °C Tc = 80 °C 121 91 100 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 300 550 -40 ... 175 Tterminal = Tterminal < 80 °C AC sinus 50Hz, t = 1 min 200 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 2 Fast IGBT4 Modules SKM100GAL12T4 Tj = 175 °C IFnom Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • UL recognized, file no. E63532 IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C Typical Applications* • • • • DC/DC – converter Brake chopper Switched reluctance motor DC – motor Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 100 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 6.15 0.40 0.345 565 7.5 1.8 2.2 0.8 0.7 10.0 15.0 5.8 0.1 2.05 2.4 0.9 0.8 11.5 16.0 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω Conditions min. typ. max. Unit VGE=VCE, IC = 3.8 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C GAL © by SEMIKRON Rev. 0 – 08.03.2010 1 SKM100GAL12T4 Characteristics Symbol td(on) tr Eon td(off) tf Eoff Conditions VCC = 600 V IC = 100 A VGE = ±15 V RG on = 1 Ω RG off = 1 Ω di/dton = 1800 A/µs di/dtoff = 1130 A/µs per IGBT Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C IF = 100 A Tj = 150 °C di/dtoff = 1600 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C IF = 100 A Tj = 150 °C di/dtoff = 1600 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per Diode Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C min. typ. 165 47 15 400 75 10.2 max. Unit ns ns mJ ns ns mJ SEMITRANS® 2 Fast IGBT4 Modules SKM100GAL12T4 Rth(j-c) 0.27 2.20 2.15 1.3 0.9 9.0 12.5 54 15.7 5.9 0.48 2.20 2.15 1.3 0.9 9.0 12.5 165 15.7 5.9 0.48 30 2.52 2.47 1.5 1.1 10.2 13.7 2.52 2.47 1.5 1.1 10.2 13.7 K/W V V V V mΩ mΩ A µC mJ K/W V V V V mΩ mΩ A µC mJ K/W nH mΩ mΩ Inverse diode VF = VEC IF = 100 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • UL recognized, file no. E63532 Freewheeling diode VF = VEC IF = 100 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w terminal-chip per module to heat sink M6 Typical Applications* • • • • DC/DC – converter Brake chopper Switched reluctance motor DC – motor Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° TC = 25 °C TC = 125 °C 3 to terminals M5 2.5 0.65 1 0.04 0.05 5 5 160 K/W Nm Nm Nm g GAL 2 Rev. 0 – 08.03.2010 © by SEMIKRON SKM100GAL12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 08.03.2010 3 SKM100GAL12T4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 0 – 08.03.2010 © by SEMIKRON SKM100GAL12T4 SEMITRANS 2 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 0 – 08.03.2010 5