SKM100GB125DN

SKM 100GB125DN Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS® 2N Ultra Fast IGBT Module SKM 100GB125DN Module Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB 1 21-05-2007 RAA © by SEMIKRON SKM 100GB125DN Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS® 2N Ultra Fast IGBT Module SKM 100GB125DN Module Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications GB 2 21-05-2007 RAA © by SEMIKRON SKM 100GB125DN Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS® 2N Zth(j-c)D Ultra Fast IGBT Module SKM 100GB125DN Features Typical Applications GB 3 21-05-2007 RAA © by SEMIKRON SKM 100GB125DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 21-05-2007 RAA © by SEMIKRON SKM 100GB125DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 21-05-2007 RAA © by SEMIKRON SKM 100GB125DN UL Recognized File 63 532 6 21-05-2007 RAA © by SEMIKRON