SKM100GB176D_10

SKM 100GB176D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS® 2 Trench IGBT Modules SKM 100GB176D Inverse Diode Module Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications* GB 1 28-06-2010 GIL © by SEMIKRON SKM 100GB176D Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS® 2 Trench IGBT Modules SKM 100GB176D Module Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Typical Applications* GB 2 28-06-2010 GIL © by SEMIKRON SKM 100GB176D Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS® 2 Trench IGBT Modules SKM 100GB176D Zth(j-c)D Features Typical Applications* GB 3 28-06-2010 GIL © by SEMIKRON SKM 100GB176D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 28-06-2010 GIL © by SEMIKRON SKM 100GB176D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 5 28-06-2010 GIL © by SEMIKRON SKM 100GB176D UL Recognized File no. E 63 532 6 28-06-2010 GIL © by SEMIKRON