SKM120B020

Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1) RGS = 20 kΩ Tcase = 25 °C Tcase = 85 °C Values 200 200 120 87 360 ± 20 500 – 55 . . .+150 2 500 Class F 55/150/56 120 360 min. 200 2,1 – – – – 60 – – – – – – – – – – – – – – – – typ. – 3,0 50 300 10 15 90 – 10,4 2 1 – 120 60 240 40 1,2 400 700 5,0 8 – – max. – 4,0 250 1000 100 17 – 100 16 4,5 1,4 30 – – – – 1,5 – – – – 0,25 0,05 Units V V A A A V W °C V SEMITRANS® M Power MOSFET Modules 120 A, 200 V, 17 mΩ SKM 120 B 020 Replaces discontinued SKM 224 A AC, 1 min DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – ID IFM= – IDM A A Units V V µA µA nA mΩ S pF nF nF nF nH ns ns ns ns V ns ns µC Features • N Channel, enhancement mode • Short internal connections avoid oscillations • Switching kWs in less than 1 µs • Isolated copper baseplate using Al2O3 ceramic Direct Copper Bonding Technology (DCB) • All electrical connections on top for easy busbaring • Large clearances and creepage distances • Material, clearances and creepage distances meet UL-specifications Typical Applications • • • • • • Switched mode power supplies DC servo and robot drives DC choppers UPS equipment Plasma cutting Not suitable for linear amplification Characteristics Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs CCHC Ciss Coss Crss LDS td(on) tr td(off) tf Conditions 1) VGS = 0, ID = 0,25 mA VGS = VDS, ID = 1 mA  Tj = 2 5 °C VGS = 0  VGS = 200 V  Tj = 125 °C VGS = 20 V, VDS = 0 VGS = 10 V, ID = 120 A VDS = 5 V, ID = 75 A per MOSFET  VGS = 0  VDS = 25 V   f = 1 MHz SEMITRANS 2       VDD = 100 V ID = 75 A VGS = 10 V RGS = 3,3 Ω Inverse Diode IF = 240 A, VGS = 0 VSD Tj = 25 °C 2) trr Tj = 150 °C 2) Tj = 25 °C 2) Qrr Tj = 150 °C 2) Thermal Characteristics per MOSFET Rthjc per module Rthch °C/W °C/W Nm lb.in. Nm lb.in. m/s2 g Mechanical Data M1 M2 a w Case 1) 2) to heatsink SI Units (M6) US Units for terminals SI Units (M5) US Units 4 35 2,5 22 – – – – – – – – D 70 5 44 3,5 24 5x9,81 250 → page B 5 – 42 Tcase = 25 °C, unless otherwise specified. IF = – ID, VR = 100 V, – diF/dt = 100 A/µs 0896 This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. © by SEMIKRON B 5 – 39 B 5 – 40 0896 © by SEMIKRON © by SEMIKRON 0896 B 5 – 41 B 5 – 42 0896 © by SEMIKRON