SKM145GAL128D

SKM 145GB128D ... Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS® 2 SPT IGBT Module SKM 145GB128D SKM 145GAL128D SKM 145GAR128D Inverse Diode Freewheeling Diode Features Module Typical Applications Characteristics Symbol Conditions IGBT min. typ. max. Units GB GAL GAR 1 13-10-2006 RAA © by SEMIKRON SKM 145GB128D ... Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS® 2 SPT IGBT Module SKM 145GB128D SKM 145GAL128D SKM 145GAR128D Freewheeling Diode Features Module Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB GAL GAR 2 13-10-2006 RAA © by SEMIKRON SKM 145GB128D ... Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS® 2 SPT IGBT Module SKM 145GB128D SKM 145GAL128D SKM 145GAR128D Zth(j-c)D Features Typical Applications GB GAL GAR 3 13-10-2006 RAA © by SEMIKRON SKM 145GB128D ... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 13-10-2006 RAA © by SEMIKRON SKM 145GB128D ... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 13-10-2006 RAA © by SEMIKRON SKM 145GB128D ... UL Regonized File no. E 63 532 6 13-10-2006 RAA © by SEMIKRON