SKM145GB063DN

SKM 145GB063DN Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANSTM 2N Superfast NPT-IGBT Modules SKM 145GB063DN SKM 145GAL063DN Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Features Inverse diode Typical Applications FWD Thermal characteristics Mechanical data GB GAL 1 14-06-2005 SEN © by SEMIKRON SKM 145GB063DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 14-06-2005 SEN © by SEMIKRON SKM 145GB063DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 14-06-2005 SEN © by SEMIKRON SKM 145GB063DN Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 14-06-2005 SEN © by SEMIKRON