SKM 150GB12T4
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMITRANS® 2 IGBT4 Modules
SKM 150GB12T4
Inverse Diode
Module
Target Data
Features
Characteristics Symbol Conditions IGBT min. typ. max. Units
Typical Applications
Remarks
GB
1
11-07-2007 SCH
© by SEMIKRON
SKM 150GB12T4
Characteristics Symbol Conditions Inverse Diode min. typ. max. Units
SEMITRANS® 2 IGBT4 Modules
SKM 150GB12T4 Freewheeling Diode
Target Data
Features
Module
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
Remarks
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
GB
2
11-07-2007 SCH
© by SEMIKRON
SKM 150GB12T4
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
11-07-2007 SCH
© by SEMIKRON
SKM 150GB12T4
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
4
11-07-2007 SCH
© by SEMIKRON
SKM 150GB12T4
UL recognized file no. E 63 532
5
11-07-2007 SCH
© by SEMIKRON
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