SKM150GB12VG

SKM150GB12VG Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 222 169 150 450 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 187 140 150 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 774 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 3 VGES tpsc Tj IF IFnom Inverse diode SKM150GB12VG Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Typical Applications* • AC inverter drives • UPS • Electronic welders Conditions IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V VCC = 600 V IC = 150 A VGE = ±15 V RG on = 4  RG off = 4  di/dton = 6100 A/µs di/dtoff = 1700 A/µs du/dtoff = 7800 V/ µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz Tj = 25 °C Tj = 150 °C min. typ. 1.85 2.25 0.94 0.88 6.07 9.13 max. 2.30 2.55 1.04 0.98 8.4 10.47 6.5 0.3 Unit V V V V m m V mA mA nF nF nF nC  ns ns mJ ns ns mJ Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° 5.5 6 0.1 9 0.89 0.884 1650 5.0 320 45 10 550 72 16.5 0.2 K/W GB © by SEMIKRON Rev. 4 – 23.03.2011 1 SKM150GB12VG Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 4000 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode min. typ. 2.17 2.11 1.3 0.9 5.8 8.1 170 22 11 max. 2.49 2.42 1.5 1.1 6.6 8.8 Unit V V V V m m A µC mJ Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 SEMITRANS® 3 IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.31 15 20 K/W nH m m SKM150GB12VG Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt terminal-chip per module to heat sink M6 TC = 25 °C TC = 125 °C 3 to terminals M6 2.5 0.25 0.5 0.02 0.038 5 5 325 Rth(c-s) Ms Mt w K/W Nm Nm Nm g Typical Applications* • AC inverter drives • UPS • Electronic welders Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° GB 2 Rev. 4 – 23.03.2011 © by SEMIKRON SKM150GB12VG Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 4 – 23.03.2011 3 SKM150GB12VG Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 4 – 23.03.2011 © by SEMIKRON SKM150GB12VG SEMITRANS 3 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 4 – 23.03.2011 5