SKM150GB12V
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 231 176 150 450 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 189 141 150 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 900 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 200 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMITRANS® 2
VGES tpsc Tj IF IFnom
Inverse diode
SKM150GB12V Features
• V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt
Tj = 175 °C
IFRM IFSM Tj Module It(RMS) Tstg Visol
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c)
Typical Applications*
• AC inverter drives • UPS • Electronic welders
Conditions
IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V VCC = 600 V IC = 150 A VGE = ±15 V RG on = 1.5 RG off = 1.5 di/dton = 4400 A/µs di/dtoff = 1800 A/µs du/dtoff = 8100 V/ µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz Tj = 25 °C Tj = 150 °C
min.
typ.
1.75 2.20 0.94 0.88 5.40 8.80
max.
2.20 2.50 1.04 0.98 7.7 10.13 6.5 0.3
Unit
V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ
Remarks
• Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150°
5.5
6 0.1 9 0.89 0.884 1650 5.0 258 32 13.5 388 62 14.2
0.19
K/W
GB © by SEMIKRON Rev. 4 – 23.03.2011 1
SKM150GB12V
Characteristics Symbol Conditions
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 5500 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode
min.
typ.
2.14 2.07 1.3 0.9 5.6 7.8 160 21.5 8.9
max.
2.46 2.38 1.5 1.1 6.4 8.5
Unit
V V V V m m A µC mJ
Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0
SEMITRANS® 2
IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE'
0.31 30
K/W nH m m
SKM150GB12V Features
• V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt
terminal-chip per module to heat sink M6
TC = 25 °C TC = 125 °C 3 to terminals M5 2.5
0.65 1 0.04 0.05 5 5 160
Rth(c-s) Ms Mt w
K/W Nm Nm Nm g
Typical Applications*
• AC inverter drives • UPS • Electronic welders
Remarks
• Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150°
GB 2 Rev. 4 – 23.03.2011 © by SEMIKRON
SKM150GB12V
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 4 – 23.03.2011
3
SKM150GB12V
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 4 – 23.03.2011
© by SEMIKRON
SKM150GB12V
SEMITRANS 2
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 4 – 23.03.2011
5
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