SKM195GAL126DN

SKM 195GB126DN Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANSTM 2N Trench IGBT Module SKM 195GB126DN SKM 195GAL126DN Preliminary Data Inverse diode Freewheeling diode Characteristics Symbol Conditions IGBT min. typ. max. Units Features Typical Applications Inverse diode FWD Thermal characteristics Mechanical data GB GAL 1 14-06-2005 SEN © by SEMIKRON SKM 195GB126DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 14-06-2005 SEN © by SEMIKRON SKM 195GB126DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 14-06-2005 SEN © by SEMIKRON SKM 195GB126DN Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 14-06-2005 SEN © by SEMIKRON