SKM195GB066D

SKM 195GB066D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS® 2 Trench IGBT Modules SKM195GB066D Inverse Diode Module Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GB GAL 1 06-10-2009 NOS © by SEMIKRON SKM 195GB066D Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS® 2 Trench IGBT Modules SKM195GB066D Module Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications Remarks GB GAL 2 06-10-2009 NOS © by SEMIKRON SKM 195GB066D Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS® 2 Trench IGBT Modules SKM195GB066D Zth(j-c)D Features Typical Applications Remarks GB GAL 3 06-10-2009 NOS © by SEMIKRON SKM 195GB066D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 06-10-2009 NOS © by SEMIKRON SKM 195GB066D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 5 06-10-2009 NOS © by SEMIKRON SKM 195GB066D UL recognized, file no. E 63 532 6 06-10-2009 NOS © by SEMIKRON