SKM200GAL126D

SKM 200GB126D ... Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS® 3 Trench IGBT Modules SKM 200GB126D SKM 200GAL126D Freewheeling Diode Inverse Diode Features Module Typical Applications Characteristics Symbol Conditions IGBT min. typ. max. Units GB GAL 1 11-09-2006 SEN © by SEMIKRON SKM 200GB126D ... Characteristics Symbol Conditions Inverse diode min. typ. max. Units SEMITRANS® 3 Trench IGBT Modules FWD SKM 200GB126D SKM 200GAL126D Features Module Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB GAL 2 11-09-2006 SEN © by SEMIKRON SKM 200GB126D ... Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS® 3 Zth(j-c)D Trench IGBT Modules SKM 200GB126D SKM 200GAL126D Features Typical Applications GB GAL 3 11-09-2006 SEN © by SEMIKRON SKM 200GB126D ... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 11-09-2006 SEN © by SEMIKRON SKM 200GB126D ... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 5 11-09-2006 SEN © by SEMIKRON SKM 200GB126D ... UL Recognized File 63 532 6 11-09-2006 SEN © by SEMIKRON