SKM200GAL12T4

SKM200GAL12T4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF SKM200GAL12T4 Conditions Values 1200 Unit V A A A A V µs °C A A A A A °C A A A A A °C A °C V Tj = 175 °C Tc = 25 °C Tc = 80 °C 314 242 200 600 -20 ... 20 SEMITRANS®3 Fast IGBT4 Modules Tj = 150 °C 10 -40 ... 175 Tj = 175 °C Tc = 25 °C Tc = 80 °C 229 172 200 600 990 -40 ... 175 IFnom Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) IFRM IFSM Tj IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 500 -40 ... 125 4000 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 229 172 200 600 990 -40 ... 175 Typical Applications • • • • DC/DC – converter Brake chopper Switched reluctance motor DC – motor Characteristics Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint Conditions IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C min. typ. 1.8 2.2 0.8 0.7 5.0 7.5 max. 2.05 2.4 0.9 0.8 5.8 8.0 6.5 0.3 Unit V V V V mΩ mΩ V mA mA nF nF nF nC Ω VGE=VCE, IC = 7.6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 5 5.8 0.1 12.3 0.81 0.69 1130 3.8 GAL © by SEMIKRON Rev. 2 – 16.06.2009 1 SKM200GAL12T4 Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) Conditions VCC = 600 V IC = 200 A VGE = ±15 V RG on = 1 Ω RG off = 1 Ω di/dton = 5500 A/µs di/dtoff = 2300 A/µs per IGBT Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 4450 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 4450 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per Diode Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C min. typ. 185 40 21 425 82 20 max. Unit ns ns mJ ns ns mJ 0.14 2.2 2.15 1.3 0.9 4.5 6.3 174 33 13 0.26 2.2 2.15 1.3 0.9 4.5 6.3 174 33.1 13 0.26 15 20 2.52 2.47 1.5 1.1 5.1 6.8 2.52 2.47 1.5 1.1 5.1 6.8 K/W V V V V mΩ mΩ A µC mJ K/W V V V V mΩ mΩ A µC mJ K/W nH mΩ mΩ SEMITRANS 3 Fast IGBT4 Modules SKM200GAL12T4 ® Inverse diode VF = VEC IF = 200 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) Freewheeling diode VF = VEC IF = 200 A VGE = 0 V chip VF0 rF Typical Applications • • • • DC/DC – converter Brake chopper Switched reluctance motor DC – motor IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° terminal-chip per module to heat sink M6 TC = 25 °C TC = 125 °C 3 to terminals M6 2.5 0.25 0.5 0.02 0.038 5 5 325 K/W Nm Nm Nm g GAL 2 Rev. 2 – 16.06.2009 © by SEMIKRON SKM200GAL12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 16.06.2009 3 SKM200GAL12T4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: CAL diode forward characteristic Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 2 – 16.06.2009 © by SEMIKRON SKM200GAL12T4 Semitrans 3 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 2 – 16.06.2009 5