SKM200GB12E4

SKM200GB12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF SKM200GB12E4 Conditions Values 1200 Unit V A A A A V µs °C A A A A A °C A °C V Tj = 175 °C Tc = 25 °C Tc = 80 °C 314 242 200 600 -20 ... 20 SEMITRANS®3 IGBT4 Modules Tj = 150 °C 10 -40 ... 175 Tj = 175 °C Tc = 25 °C Tc = 80 °C 229 172 200 600 990 -40 ... 175 500 -40 ... 125 IFnom Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4) IFRM IFSM Tj Module It(RMS) Tstg Visol IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C AC sinus 50Hz, t = 1 min 4000 Typical Applications • AC inverter drives • UPS • Electronic welders at fsw up to 20 kHz Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 12.3 0.81 0.69 1130 3.8 Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C 204 40 21 490 107 27 0.14 1.8 2.2 0.8 0.7 5.0 7.5 5.8 0.1 2.05 2.4 0.9 0.8 5.8 8.0 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° VGE=VCE, IC = 7.6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 200 A VGE = ±15 V RG on = 1 Ω RG off = 1 Ω di/dton = 5500 A/µs di/dtoff = 2300 A/µs per IGBT GB © by SEMIKRON Rev. 0 – 19.02.2009 1 SKM200GB12E4 Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 4450 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode min. typ. 2.2 2.15 1.3 0.9 4.5 6.3 174 33 13 max. 2.52 2.47 1.5 1.1 5.1 6.8 Unit V V V V mΩ mΩ A µC mJ Inverse diode VF = VEC IF = 200 A VGE = 0 V chip VF0 SEMITRANS®3 IGBT4 Modules SKM200GB12E4 IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.26 15 20 K/W nH mΩ mΩ Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4) Rth(c-s) Ms Mt w terminal-chip per module to heat sink M6 TC = 25 °C TC = 125 °C 3 to terminals M6 2.5 0.25 0.5 0.02 0.038 5 5 325 K/W Nm Nm Nm g Typical Applications • AC inverter drives • UPS • Electronic welders at fsw up to 20 kHz Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° GB 2 Rev. 0 – 19.02.2009 © by SEMIKRON SKM200GB12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 19.02.2009 3 SKM200GB12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: CAL diode forward characteristic Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 0 – 19.02.2009 © by SEMIKRON SKM200GB12E4 Semitrans 3 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 0 – 19.02.2009 5