SKM200GB176D

SKM 200GB176D... Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS® 3 Trench IGBT Modules SKM 200GB176D SKM 200GAL176D Preliminary Data Freewheeling Diode Inverse Diode Features Module Typical Applications Characteristics Symbol Conditions IGBT min. typ. max. Units GB GAL 1 06-03-2007 RAA © by SEMIKRON SKM 200GB176D... Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS® 3 Trench IGBT Modules FWD SKM 200GB176D SKM 200GAL176D Preliminary Data Features Module Typical Applications This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB GAL 2 06-03-2007 RAA © by SEMIKRON SKM 200GB176D... Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS® 3 Zth(j-c)D Trench IGBT Modules SKM 200GB176D SKM 200GAL176D Preliminary Data Features Typical Applications GB GAL 3 06-03-2007 RAA © by SEMIKRON SKM 200GB176D... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 06-03-2007 RAA © by SEMIKRON SKM 200GB176D... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 Typ. CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode reverse recovery charge 5 06-03-2007 RAA © by SEMIKRON SKM 200GB176D... 6 06-03-2007 RAA © by SEMIKRON