SKM200GB176DH10

SKM 200GB176D H10 Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANSTM 3 Trench IGBT Modules SKM 200GB176D H10 Inverse diode Freewheeling diode Target Data Characteristics Symbol Conditions IGBT min. typ. max. Units Features Typical Applications Remarks Inverse diode Thermal characteristics Mechanical data GB 1 15-12-2005 SCT © by SEMIKRON SKM 200GB176D H10 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 15-12-2005 SCT © by SEMIKRON SKM 200GB176D H10 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 15-12-2005 SCT © by SEMIKRON SKM 200GB176D H10 Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 15-12-2005 SCT © by SEMIKRON