SKM 200GB176D
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMITRANS® 3 Trench IGBT Modules
SKM 200GB176D SKM 200GAL176D Freewheeling Diode Inverse Diode
Features
Module
Typical Applications*
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
GB
GAL
1
28-06-2010 GIL
© by SEMIKRON
SKM 200GB176D
Characteristics Symbol Conditions Inverse Diode min. typ. max. Units
SEMITRANS® 3 Trench IGBT Modules
FWD SKM 200GB176D SKM 200GAL176D
Features
Module
Typical Applications*
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
GB
GAL
2
28-06-2010 GIL
© by SEMIKRON
SKM 200GB176D
Zth Symbol Zth(j-c)l Conditions Values Units
SEMITRANS® 3
Zth(j-c)D
Trench IGBT Modules
SKM 200GB176D SKM 200GAL176D
Features
Typical Applications*
GB
GAL
3
28-06-2010 GIL
© by SEMIKRON
SKM 200GB176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
28-06-2010 GIL
© by SEMIKRON
SKM 200GB176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 Typ. CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode reverse recovery charge
5
28-06-2010 GIL
© by SEMIKRON
SKM 200GB176D
UL Recognized File no. E 63 532
6
28-06-2010 GIL
© by SEMIKRON
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