SKM300GB125D_09

SKM 300GB125D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS® 3 Ultra Fast IGBT Module SKM 300GB125D Module Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB 1 03-06-2009 NOS © by SEMIKRON SKM 300GB125D Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS® 3 Ultra Fast IGBT Module Module SKM 300GB125D Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications GB 2 03-06-2009 NOS © by SEMIKRON SKM 300GB125D Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS® 3 Zth(j-c)D Ultra Fast IGBT Module SKM 300GB125D Features Typical Applications GB 3 03-06-2009 NOS © by SEMIKRON SKM 300GB125D Fig. 1 Typ. output characteristic, tp = 80 µs; 125 °C Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V Fig. 6 Typ. gate charge characteristic 4 03-06-2009 NOS © by SEMIKRON SKM 300GB125D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 03-06-2009 NOS © by SEMIKRON SKM 300GB125D UL Recognized File 63 532 6 03-06-2009 NOS © by SEMIKRON