SKM300GB12T4
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF
SKM300GB12T4
Conditions
Values
1200
Unit
V A A A A V µs °C A A A A A °C A °C V
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
422 324 300 900 -20 ... 20
SEMITRANS®3
Fast IGBT4 Modules
Tj = 150 °C
10 -40 ... 175
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
353 264 300 900 1548 -40 ... 175 500 -40 ... 125
IFnom
Features
• IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4)
IFRM IFSM Tj Module It(RMS) Tstg Visol
IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C
AC sinus 50Hz, t = 1 min
4000
Typical Applications
• AC inverter drives • UPS • Electronic welders at fsw up to 20 kHz
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 17.6 1.16 0.94 1700 2.5 Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C 200 44 27 450 90 29 0.11 1.85 2.25 0.8 0.7 3.5 5.2 5.8 0.1 2.1 2.45 0.9 0.8 4.0 5.5 6.5 0.3 V V V V mΩ mΩ V mA mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W
Conditions
min.
typ.
max.
Unit
Remarks
• Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150°
VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 300 A VGE = ±15 V RG on = 1.5 Ω RG off = 1.5 Ω di/dton = 7500 A/µs di/dtoff = 3350 A/µs per IGBT
GB © by SEMIKRON Rev. 0 – 19.02.2009 1
SKM300GB12T4
Characteristics Symbol Conditions
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 300 A Tj = 150 °C di/dtoff = 7300 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode
min.
typ.
2.17 2.11 1.3 0.9 2.9 4.0 345 54 23
max.
2.49 2.42 1.5 1.1 3.3 4.4
Unit
V V V V mΩ mΩ A µC mJ
Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0
SEMITRANS®3
Fast IGBT4 Modules
SKM300GB12T4
IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE'
0.17 15 20
K/W nH mΩ mΩ
Features
• IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4) Rth(c-s) Ms Mt w
terminal-chip per module to heat sink M6
TC = 25 °C TC = 125 °C 3 to terminals M6 2.5
0.25 0.5 0.02 0.038 5 5 325
K/W Nm Nm Nm g
Typical Applications
• AC inverter drives • UPS • Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150°
GB 2 Rev. 0 – 19.02.2009 © by SEMIKRON
SKM300GB12T4
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 19.02.2009
3
SKM300GB12T4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: CAL diode forward characteristic
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 0 – 19.02.2009
© by SEMIKRON
SKM300GB12T4
Semitrans 3
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 0 – 19.02.2009
5
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