SKM300GB12V

SKM300GB12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 420 319 300 900 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 353 264 300 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 1548 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 3 VGES tpsc Tj IF IFnom Inverse diode SKM300GB12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Typical Applications* • AC inverter drives • UPS • Electronic welders Conditions IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V VCC = 600 V IC = 300 A VGE = ±15 V RG on = 2.5  RG off = 2.5  di/dton = 7700 A/µs di/dtoff = 3500 A/µs du/dtoff = 7500 V/ µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C min. typ. 1.85 2.25 0.94 0.88 3.03 4.57 max. 2.30 2.55 1.04 0.98 4.2 5.23 6.5 0.3 Unit V V V V m m V mA mA nF nF nF nC  ns ns mJ ns ns mJ Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° VGE=VCE, IC = 12 mA Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 5.5 6 0.1 18 1.77 1.768 3310 2.5 340 48 23 576 69 33 0.11 K/W GB © by SEMIKRON Rev. 5 – 23.03.2011 1 SKM300GB12V Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 300 A Tj = 150 °C di/dtoff = 8500 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode min. typ. 2.17 2.11 1.3 0.9 2.9 4.0 350 45 21 max. 2.49 2.42 1.5 1.1 3.3 4.4 Unit V V V V m m A µC mJ Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 SEMITRANS® 3 IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.17 15 20 K/W nH m m SKM300GB12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt terminal-chip per module to heat sink M6 TC = 25 °C TC = 125 °C 3 to terminals M6 2.5 0.25 0.5 0.02 0.038 5 5 325 Rth(c-s) Ms Mt w K/W Nm Nm Nm g Typical Applications* • AC inverter drives • UPS • Electronic welders Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° GB 2 Rev. 5 – 23.03.2011 © by SEMIKRON SKM300GB12V Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 5 – 23.03.2011 3 SKM300GB12V Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 5 – 23.03.2011 © by SEMIKRON SKM300GB12V SEMITRANS 3 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 5 – 23.03.2011 5