SKM400GAL12V

SKM400GAL12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 612 467 400 1200 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 440 329 400 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1200 1980 -40 ... 175 Tc = 25 °C Tc = 80 °C 440 329 400 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1200 1980 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 3 VGES tpsc Tj IF IFnom Inverse diode SKM400GAL12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Tj = 175 °C IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C Typical Applications* • • • • Electronic welders DC/DC – converter Brake chopper Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint Conditions IC = 400 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C Tj = 150 °C min. typ. 1.75 2.20 0.94 0.88 2.02 3.30 max. 2.20 2.50 1.04 0.98 2.9 3.80 6.5 0.3 Unit V V V V m m V mA mA nF nF nF nC  VGE=VCE, IC = 16 mA Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 5.5 6 0.1 24.04 2.36 2.356 4420 1.9 GAL © by SEMIKRON Rev. 3 – 23.03.2011 1 SKM400GAL12V Characteristics Symbol td(on) tr Eon td(off) tf Eoff VCC = 600 V IC = 400 A VGE = ±15 V RG on = 3  RG off = 3  di/dton = 9800 A/µs di/dtoff = 5000 A/µs du/dtoff = 7600 V/ µs per IGBT Conditions min. Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C typ. 350 60 39 700 65 42 max. Unit ns ns mJ ns ns mJ SEMITRANS® 3 Rth(j-c) 0.072 Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C 2.20 2.15 1.3 0.9 2.3 3.1 450 58 26 0.14 2.20 2.15 1.3 0.9 2.3 3.1 450 68 30.5 0.14 15 20 2.52 2.47 1.5 1.1 2.5 3.4 2.52 2.47 1.5 1.1 2.5 3.4 K/W V V V V m m A µC mJ K/W V V V V m m A µC mJ K/W nH m m SKM400GAL12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Inverse diode VF = VEC IF = 400 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 9500 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 8800 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per Diode Freewheeling diode VF = VEC IF = 400 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w terminal-chip per module to heat sink M6 Typical Applications* • • • • Electronic welders DC/DC – converter Brake chopper Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° TC = 25 °C TC = 125 °C 3 to terminals M6 2.5 0.25 0.5 0.02 0.038 5 5 325 K/W Nm Nm Nm g GAL 2 Rev. 3 – 23.03.2011 © by SEMIKRON SKM400GAL12V Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 23.03.2011 3 SKM400GAL12V Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 3 – 23.03.2011 © by SEMIKRON SKM400GAL12V SEMITRANS 3 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 3 – 23.03.2011 5