SKM400GB126D_09

SKM 400GB126D ... Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS® 3 Trench IGBT Module SKM 400GB126D SKM 400GAL126D Freewheeling Diode Inverse Diode Features Module Typical Applications* Characteristics Symbol Conditions IGBT min. typ. max. Units GB GAL 1 06-10-2009 NOS © by SEMIKRON SKM 400GB126D ... Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS® 3 Trench IGBT Module Freewheeling Diode SKM 400GB126D SKM 400GAL126D Features Module Typical Applications* This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. GB GAL 2 06-10-2009 NOS © by SEMIKRON SKM 400GB126D ... Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS® 3 Zth(j-c)D Trench IGBT Module SKM 400GB126D SKM 400GAL126D Features Typical Applications* GB GAL 3 06-10-2009 NOS © by SEMIKRON SKM 400GB126D ... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 06-10-2009 NOS © by SEMIKRON SKM 400GB126D ... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 06-10-2009 NOS © by SEMIKRON SKM 400GB126D ... UL Recognized File 63 532 6 06-10-2009 NOS © by SEMIKRON