SKM50GAL123D

Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C Values ... 123 D 1200 1200 50 / 40 100 / 80 ± 20 310 – 40 . . .+150 (125) 2 500 Class F 40/125/56 50 / 40 100 / 80 550 1500 Units V V A A V W °C V SEMITRANS® M IGBT Modules SKM 50 GB 123 D SKM 50 GAL 123 D Diodes IF= – IC IFM= – ICM IFSM I2t A A A2s SEMITRANS 2 Characteristics Symbol V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon 5) Eoff 5) Diodes 8) VF = VEC VF = VEC VTO rT IRRM Qrr Conditions 1) VGE = 0, IC = 1 mA VGE = VCE, IC = 2 mA  Tj = 25 °C VGE = 0  VCE = VCES  Tj = 125 °C VGE = 20 V, VCE = 0  IC = 40 A  VGE = 15 V;   IC = 50 A  Tj = 25 (125) °C  VCE = 20 V, IC = 40 A per IGBT  VGE = 0  VCE = 25 V  f = 1 MHz min. typ. max. – 6,5 1 – 200 3(3,7) – – 350 4000 600 300 30 – – – – – – 2,2 – 1,2 22 – – 0,4 0,7 0,05 Units V V mA mA nA V V S pF pF pF pF nH ns ns ns ns mWs mWs V V V mΩ A µC °C/W °C/W °C/W GB GAL ≥ VCES – 4,5 5,5 – 0,3 – 3 – – – 2,5(3,1) – 2,7(3,5) 30 – – – – – – – – – – – – – – – – – – – – – 3300 500 220 – 70 60 400 45 7 4,5 1,85(1,6) 2,0(1,8) – – 23(35) 2,3(7) – – –        VCC = 600 V VGE = + 15 V / - 15 V3) IC = 40 A, ind. load RGon = RGoff = 27 Ω Tj = 125 °C Features • MOS input (voltage controlled) • N channel, Homogeneous Si • Low inductance case • Very low tail current with low temperature dependence • High short circuit capability, self limiting to 6 * Icnom • Latch-up free • Fast & soft inverse CAL diodes8) • Isolated copper baseplate using DCB Direct Copper Bonding Technology • Large clearance (10 mm) and creepage distances (20 mm). Typical Applications: → B 6 - 85 • Three phase inverter drives • Switching (not for linear use) 1) 2) 3) 5) 8)  IF = 40 A  VGE = 0 V;   IF = 50 A  Tj = 25 (125) °C  Tj = 125 °C Tj = 125 °C IF = 40 A; Tj = 25 (125) °C2) IF = 40 A; Tj = 25 (125) °C2) Thermal Characteristics per IGBT Rthjc per diode Rthjc per module Rthch Tcase = 25 °C, unless otherwise specified IF = – IC, VR = 600 V, – diF/dt = 800 A/µs, VGE = 0 V Use VGEoff = -5 ... -15 V See fig. 2 + 3; RGoff = 27 Ω CAL = Controlled Axial Lifetime Technology. Case and mech. data → B 6 - 86 SEMITRANS 2 © by SEMIKRON 0898 B 6 – 81 SKM 50 GB 123 D… Tj = 125 °C VCE = 600 V VGE = + 15 V RG = 27 Ω Fig. 1 Rated power dissipation Ptot = f (TC) Fig. 2 Turn-on /-off energy = f (IC) Tj = 125 °C VCE = 600 V VGE = + 15 V IC = 40 A 1 pulse TC = 25 °C Tj < 150 °C Fig. 3 Turn-on /-off energy = f (RG) ICpuls /IC 502rso.vpo Fig. 4 Maximum safe operating area (SOA) IC = f (VCE) ICSC/ICN 502soas.vpo 2,5 2 Tj < 150 °C VGE = + 15 V RGoff = 27 Ω IC = 40 A 12 10 8 1,5 6 1 4 Note: *Allowed numbers of short circuit:1s Tj < 150 °C VGE = + 15 V tsc < 10 µs L < 25 nH ICN = 40 A 0,5 2 0 0 500 1000 1500 VCE [V] 0 0 500 1000 1500 VCE [V] Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit IC = f (VCE) B 6 – 82 0898 © by SEMIKRON Tj = 150 °C VGE > 15 V Fig. 8 Rated current vs. temperature IC = f (TC) ,& >$@  9 9 9  9 9  9     ;54 ,& >$@   ;54  9 9 9 9 9 9         9&( >9@   Fig. 9 Typ. output characteristic, tp = 80 µs; 25 °C 9&( >9@ Fig. 10 Typ. output characteristic, tp = 80 µs; 125 °C ,& >$@   ;54       Pcond(t) = VCEsat(t) . IC(t)  VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) . IC(t) VCE(TO)(Tj) ≤ 1,5 + 0,002 (Tj - 25) [V] typ.: rCE(Tj) = 0,02 + 0,00008 (Tj - 25) [Ω] max.: rCE(Tj) = 0,03 + 0,00010 (Tj - 25) [Ω] valid for VGE = + 15 +2 [V]; IC > 0,3 ICnom −1                Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations Fig. 12 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V 9*( >9@ © by SEMIKRON 0898 B 6 – 83 SKM 50 GB 123 D… 9*( >9@                0 ,1 1 Coss Crss Ciss   ;54 C [nF] 100 502C.vpo 9 9 ICpuls = 50 A 10 VGE = 0 V f = 1 MHZ 4* >Q&@ W >QV@   0 10 20 30 40 VCE [V] Fig. 13 Typ. gate charge characteristic W >QV@   ;54 Fig. 14 Typ. capacitances vs.VCE  ;54 WGRII  WGRQ Tj = 125 °C VCE = 600 V VGE = + 15 V RGon = 27 Ω RGoff = 27 Ω induct. load WGRII WGRQ  WU Tj = 125 °C VCE = 600 V VGE = + 15 V IC = 40 A induct. load WU WI WI         ,& >$@     5* >:@  Fig. 15 Typ. switching times vs. IC Fig. 16 Typ. switching times vs. gate resistor RG  ' &&   ' 0*%;/6 P %M  S #*    ' *(  [' Ω Ω Ω Ω   60 Ω  (411  , $       Fig. 17 Typ. CAL diode forward characteristic Fig. 18 Diode turn-off energy dissipation per pulse B 6 – 84 0898 © by SEMIKRON © by SEMIKRON 0796 B 6 – 85 SKM 50 GB 123 D… SEMITRANS 2 Case D 61 UL Recognized File no. E 63 532 SKM 50 GB 123 D Dimensions in mm SKM 50 GAL 123 D Case D 62 (→ D 61) Case outline and circuit diagrams Mechanical Data Symbol M1 M2 a w Conditions to heatsink, SI Units to heatsink, US Units for terminals, SI Units for terminals US Units (M6) (M5) min. 3 27 2,5 22 – – Values typ. max. – 5 – 44 – 5 – 44 – 5x9,81 – 160 Units Nm lb.in. Nm lb.in. m/s2 g This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Eight devices are supplied in one SEMIBOX A without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 2) Larger packaging units of 20 or 42 pieces are used if suitable Accessories → B 6 – 4. SEMIBOX → C – 1. B 6 – 86 0898 © by SEMIKRON