SKM50GB063D

SKM50GB063D Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 300 V VGE ≤ 20 V VCES ≤ 600 V VGES tpsc Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min Tterminal < 80 °C 200 -40 ... 125 2500 A °C V IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C -40 ... 150 Tc = 25 °C Tc = 80 °C 75 45 50 100 A A A A A °C Tj = 125 °C Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 75 °C 600 70 51 50 100 -20 ... 20 10 -55 ... 150 V A A A A V µs °C Conditions Values Unit SEMITRANS® 2 Superfast NPT-IGBT Modules SKM50GB063D Target Data Features • NPT = non punch-through IGBT technology • High short circuit capability, self limiting to 6 x IC • Pos. temp.-coeff. of VCEsat • Isolated copper baseplate Characteristics Typical Applications* • Switched mode power supplies • UPS • Three phase inverters for servo / AC motor speed control Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Conditions IC = 50 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V VGE=VCE, IC = 1 mA VGE = 0 V VCE = 600 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 20 V Tj = 25 °C VCC = 300 V IC = 50 A VGE = ±15 V RG on = 22 Ω RG off = 22 Ω Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C per IGBT Tj = 25 °C f = 1 MHz f = 1 MHz f = 1 MHz Tj = 25 °C Tj = 125 °C min. typ. 2.1 2.4 1.05 1 21.0 28.0 max. 2.5 2.8 1.3 1.2 24.0 32.0 6.5 0.3 Unit V V V V mΩ mΩ V mA mA nF nF nF nC Ω 4.5 5.5 0.1 2.2 0.2 50 40 2.5 300 30 1.8 0.5 ns ns mJ ns ns mJ K/W GB © by SEMIKRON Rev. 2 – 22.04.2010 1 SKM50GB063D Characteristics Symbol Conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C rF Tj = 25 °C Tj = 125 °C IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w terminal-chip per module to heat sink M6 to terminals M5 3 2.5 TC = 25 °C TC = 125 °C 0.65 1 0.04 0.05 5 5 160 IF = 50 A di/dtoff = 50 A/µs VGE = ±15 V VCC = 300 V per diode Tj = 125 °C Tj = 125 °C Tj = 125 °C min. typ. 1.35 1.35 1.05 0.9 6.0 9.0 31 3.2 0.48 max. 1.60 1.60 1.2 1 8.0 12.0 Unit V V V V mΩ mΩ A µC mJ Inverse diode VF = VEC IF = 50 A VGE = 0 V chip VF0 SEMITRANS® 2 Superfast NPT-IGBT Modules SKM50GB063D Target Data Features • NPT = non punch-through IGBT technology • High short circuit capability, self limiting to 6 x IC • Pos. temp.-coeff. of VCEsat • Isolated copper baseplate 1 30 K/W nH mΩ mΩ K/W Nm Nm Nm g Typical Applications* • Switched mode power supplies • UPS • Three phase inverters for servo / AC motor speed control GB 2 Rev. 2 – 22.04.2010 © by SEMIKRON SKM50GB063D Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 22.04.2010 3 SKM50GB063D Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 2 – 22.04.2010 © by SEMIKRON SKM50GB063D SEMITRANS 2 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 2 – 22.04.2010 5