SKM600GA124D

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WS  —V  ƒ& )LJ  7\S RXWSXW .KDUD.WHULVWL. WS 1200  —V  ƒ& M600GA124.XLS-12 3.RQG W 9&(VDW W 9&( 72 7M 9&(VDW W  ,& W 9&( 72 7M A 1000 U&( 7M  ,& W 800 ≤   ±   7M ± >9@       ±   7M ± >Ω@   7M ± >Ω@ >9@ ,& ≥   ,&QRP 600 W\S U&( 7M PD[ U&( 7M YDOLG IRU 9*( 400 200 IC 0 0 VG 2 4 6 8 10 12 V 14 )LJ  6DWXUDWLRQ .KDUD.WHULVWL. ,*%7 &DO.XODWLRQ HOHPHQWV DQG HTXDWLRQV ‹ E\ 6(0,.521 )LJ  7\S WUDQVIHU .KDUD.WHULVWL. WS   —V 9&(  9 %  ±  6.0  *$  ' M600GA124.XLS-13 M600GA124.XLS-14 20 V 18 16 14 800V 12 10 8 6 4 VGE 2 0 0 QGate 1000 2000 3000 nC 600 ICpuls = 400 A 100 nF Cies VGE = 0 V f = 1 MHz 10 Coes C Cres 1 4000 0 VCE 10 20 V 30 Fig. 13 Typ. gate charge characteristic M600GA124.XLS-15 Fig. 14 Typ. capacitances vs.VCE M600GA124.XLS-16 10000 ns 1000 tdoff Tj = 125 °C VCE = 600 V VGE = ± 15 V RGon = 4 Ω RGoff = 4 Ω induct. load 10000 ns tdoff 1000 tdon Tj = 125 °C VCE = 600 V VGE = ± 15 V IC = 400 A induct. load 100 tr tdon tf tr 100 tf t 10 0 IC 200 400 600 800 A 1000 t 10 2 RG 4 6 8 10 Ω 12 Fig. 15 Typ. switching times vs. IC M600GA124.XLS-17 Fig. 16 Typ. switching times vs. gate resistor RG M600GA124.XLS-18 800 A 600 Tj=125°C, typ. Tj=25°C, typ. Tj=125°C, max. Tj=25°C, max. 40 mJ 35 30 25 20 15 R G= 4Ω 5Ω VCC = 600 V Tj = 125 °C VGE = ± 15 V 400 10 Ω 200 IF 0 0 VF 1 2 V 3 10 5 0 0 IF 200 400 600 800 A 1000 EoffD Fig. 17 Typ. CAL diode forward characteristic %  ±  Fig. 18 Diode turn-off energy dissipation per pulse  ‹ E\ 6(0,.521 SKM 600 GA 124 D 0,1 K/W 0,01 M600GA124.XLS-19 0,1 K/W M600GA124.XLS-20 0,01 D=0,5 0,2 0,1 0,05 0,02 0,01 0,001 0,0001 single pulse ZthJC 0,00001 0,00001 0,0001 tp D=0,50 0,20 0,10 0,05 0,02 0,01 0,001 ZthJC 0,0001 0,00001 single pulse 0,001 0,01 0,1 s 1 tp 0,0001 0,001 0,01 0,1 s 1 Fig. 19 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp / tc = tp · f 500 A 400 4Ω 5Ω 300 10 Ω 200 M600GA124.XLS-22 Fig. 20 Transient thermal impedance of inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp · f 9&&  9 7M  ƒ& 9*( “  9 600 A 500 RG 4Ω 400 5Ω M600GA124.XLS-23 RG 9&&  9 7M  ƒ& 9*( “  9 ,)  $ 300 10 Ω 200 100 IRR 0 0 IF 200 400 600 800 A 1000 100 IRR 0 0 diF/dt 2000 4000 6000 8000 A/µs Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG) 120 µC 100 10 Ω 400 A 60 300 A 200 A 40 100 A 20 Qrr 0 0 1000 diF/dt 2000 3000 4000 5000 6000 A/µs M600GA124.XLS-24 Fig. 23 Typ. CAL diode peak reverse recovery current IRR = f (diF/dt; RG) R G= 5 4Ω IF= 800 A 9&&  9 7M  ƒ& 9*( “  9 80 Fig. 24 Typ. CAL diode recovered charge QRR = f (diF/dt; IF; RG © by SEMIKRON 010502 B 6 – 35 6.0  *$  ' 6(0,75$16  &DVH '  8/ 5H.RJQL]HG )LOH QR (   6.0  *$  ' 'LPHQVLRQV LQ PP &DVH RXWOLQH DQG .LU.XLW GLDJUDP 0H.KDQL.DO 'DWD 6\PERO &RQGLWLRQV PLQ 0 0 D Z WR KHDWVLQN 6, 8QLWV WR KHDWVLQN 86 8QLWV IRU WHUPLQDOV 6, 8QLWV IRU WHUPLQDOV 86 8QLWV 0 00       ± ± 9DOXHV W\S ± ± ± ± ± ± 8QLWV PD[     [   1P OELQ 1P OELQ PV J 7KLV LV DQ HOH.WURVWDWL. 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