SKM600GA125D_11

SKM 600GA125D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS® 4 Ultra Fast IGBT Modules SKM 600GA125D Module Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications* Remarks GA 1 24-02-2011 NOS © by SEMIKRON SKM 600GA125D Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS® 4 Ultra Fast IGBT Modules Module SKM 600GA125D Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. Typical Applications* Remarks GA 2 24-02-2011 NOS © by SEMIKRON SKM 600GA125D Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS® 4 Zth(j-c)D Ultra Fast IGBT Modules SKM 600GA125D Features Typical Applications* Remarks GA 3 24-02-2011 NOS © by SEMIKRON SKM 600GA125D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 24-02-2011 NOS © by SEMIKRON SKM 600GA125D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 24-02-2011 NOS © by SEMIKRON SKM 600GA125D UL Recognized File 63 532 6 24-02-2011 NOS © by SEMIKRON