SKM600GA12V

SKM600GA12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 908 692 600 1800 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 707 529 600 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1800 3240 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 4 VGES tpsc Tj IF IFnom Inverse diode SKM600GA12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Typical Applications* • • • • AC inverter drives UPS Electronic welders Switched reluctance motor Conditions IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V VCC = 600 V IC = 600 A VGE = ±15 V RG on = 2.5  RG off = 2.5  di/dton = 9000 A/µs di/dtoff = 6000 A/µs du/dtoff = 6400 V/ µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C min. typ. 1.75 2.20 0.94 0.88 1.35 2.20 max. 2.18 2.50 1.04 0.98 1.9 2.53 6.5 0.3 Unit V V V V m m V mA mA nF nF nF nC  ns ns mJ ns ns mJ Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° VGE=VCE, IC = 24 mA Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz 5.5 6 0.1 36 3.55 3.536 6620 1.3 710 85 76 930 98 76 0.049 K/W GA © by SEMIKRON Rev. 3 – 23.03.2011 1 SKM600GA12V Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 8600 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode min. typ. 2.14 2.07 1.3 0.9 1.4 1.9 635 118 43 max. 2.46 2.38 1.5 1.1 1.6 2.1 Unit V V V V m m A µC mJ Inverse diode VF = VEC IF = 600 A VGE = 0 V chip VF0 SEMITRANS® 4 IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.086 15 20 K/W nH m m SKM600GA12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt terminal-chip per module to heat sink M6 TC = 25 °C TC = 125 °C 3 2.5 0.18 0.22 0.02 0.038 5 5 330 Rth(c-s) Ms Mt w K/W Nm Nm Nm g to terminals M6, M4 Typical Applications* • • • • AC inverter drives UPS Electronic welders Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° GA 2 Rev. 3 – 23.03.2011 © by SEMIKRON SKM600GA12V Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 23.03.2011 3 SKM600GA12V Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 3 – 23.03.2011 © by SEMIKRON SKM600GA12V SEMITRANS 4 GA This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 3 – 23.03.2011 5