SKM600GA176D_10

SKM 600GA176D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS® 4 Trench IGBT Modules SKM 600GA176D Module Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications* Remarks GA 1 28-06-2010 GIL © by SEMIKRON SKM 600GA176D Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS® 4 Trench IGBT Modules Module SKM 600GA176D Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Typical Applications* Remarks GA 2 28-06-2010 GIL © by SEMIKRON SKM 600GA176D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 28-06-2010 GIL © by SEMIKRON SKM 600GA176D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 4 28-06-2010 GIL © by SEMIKRON SKM 600GA176D UL Recognized File no. 63 532 5 28-06-2010 GIL © by SEMIKRON