SKM75GAR063D

SKM 75GB063D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS® 2 Superfast NPT-IGBT Modules SKM 75GB063D SKM 75GAR063D SKM 75GAL063D Inverse Diode Freewheeling Diode Features Module Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB GAL GAR 1 18-06-2007 SCT © by SEMIKRON SKM 75GB063D Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS® 2 Freewheeling Diode Superfast NPT-IGBT Modules SKM 75GB063D SKM 75GAR063D SKM 75GAL063D Module Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications GB GAL GAR 2 18-06-2007 SCT © by SEMIKRON SKM 75GB063D Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS® 2 Superfast NPT-IGBT Modules SKM 75GB063D SKM 75GAR063D SKM 75GAL063D Zth(j-c)D Features Typical Applications GB GAL GAR 3 18-06-2007 SCT © by SEMIKRON SKM 75GB063D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 18-06-2007 SCT © by SEMIKRON SKM 75GB063D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic, inclusive RCC'+ EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 5 18-06-2007 SCT © by SEMIKRON SKM 75GB063D UL recognized File no. E 63 532 6 18-06-2007 SCT © by SEMIKRON