SKM 75GB063D
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMITRANS® 2 Superfast NPT-IGBT Modules
SKM 75GB063D SKM 75GAR063D SKM 75GAL063D
Inverse Diode
Freewheeling Diode
Features
Module
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Typical Applications
GB
GAL
GAR
1
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
Characteristics Symbol Conditions Inverse Diode min. typ. max. Units
SEMITRANS® 2
Freewheeling Diode
Superfast NPT-IGBT Modules
SKM 75GB063D SKM 75GAR063D SKM 75GAL063D
Module
Features
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
Typical Applications
GB
GAL
GAR
2
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
Zth Symbol Zth(j-c)l Conditions Values Units
SEMITRANS® 2 Superfast NPT-IGBT Modules
SKM 75GB063D SKM 75GAR063D SKM 75GAL063D
Zth(j-c)D
Features
Typical Applications
GB
GAL
GAR
3
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic, inclusive RCC'+ EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
18-06-2007 SCT
© by SEMIKRON
SKM 75GB063D
UL recognized File no. E 63 532
6
18-06-2007 SCT
© by SEMIKRON
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