SKM75GB12V_11

SKM75GB12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 114 87 75 225 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 97 73 75 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 225 430 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 200 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 2 VGES tpsc Tj IF IFnom Inverse diode SKM75GB12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Typical Applications* • AC inverter drives • UPS • Electronic welders Conditions IC = 75 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE=VCE, IC = 3 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V VCC = 600 V IC = 75 A VGE = ±15 V RG on = 1.3  RG off = 1.3  di/dton = 3900 A/µs di/dtoff = 1020 A/µs du/dtoff = 9000 V/ µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz Tj = 25 °C Tj = 150 °C min. typ. 1.85 2.25 0.94 0.88 12.13 18.27 max. 2.30 2.55 1.04 0.98 16.8 20.93 6.5 0.3 Unit V V V V m m V mA mA nF nF nF nC  ns ns mJ ns ns mJ Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° 5.5 6 0.1 4.5 0.44 0.442 830 10.0 258 32 6.7 388 62 7.1 0.38 K/W GB © by SEMIKRON Rev. 5 – 23.03.2011 1 SKM75GB12V Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C rF Tj = 25 °C Tj = 150 °C IF = 75 A Tj = 150 °C di/dtoff = 2950 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode min. typ. 2.17 2.11 1.3 0.9 11.6 16.1 85 10 4.2 max. 2.49 2.42 1.5 1.1 13.2 17.6 Unit V V V V m m A µC mJ Inverse diode VF = VEC IF = 75 A VGE = 0 V chip VF0 SEMITRANS® 2 IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.58 30 K/W nH m m SKM75GB12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt terminal-chip per module to heat sink M6 TC = 25 °C TC = 125 °C 3 to terminals M5 2.5 0.65 1 0.04 0.05 5 5 160 Rth(c-s) Ms Mt w K/W Nm Nm Nm g Typical Applications* • AC inverter drives • UPS • Electronic welders Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° GB 2 Rev. 5 – 23.03.2011 © by SEMIKRON SKM75GB12V Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 5 – 23.03.2011 3 SKM75GB12V Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 5 – 23.03.2011 © by SEMIKRON SKM75GB12V SEMITRANS 2 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 5 – 23.03.2011 5