SKM800GA126D_09

SKM 800GA126D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS® 4 Trench IGBT Modules SKM 800GA126D Module Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications* Remarks GA 1 06-10-2009 NOS © by SEMIKRON SKM 800GA126D Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS® 4 Trench IGBT Modules Module SKM 800GA126D Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Typical Applications* Remarks * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. GA 2 06-10-2009 NOS © by SEMIKRON SKM 800GA126D Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS® 4 Zth(j-c)D Trench IGBT Modules SKM 800GA126D Features Typical Applications* Remarks GA 3 06-10-2009 NOS © by SEMIKRON SKM 800GA126D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 06-10-2009 NOS © by SEMIKRON SKM 800GA126D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 06-10-2009 NOS © by SEMIKRON SKM 800GA126D UL Recognized File 63 532 6 06-10-2009 NOS © by SEMIKRON