SKR10

SKR 10,3 Qu bond Absolute Maximum Ratings Symbol VRRM IF(AV) it IFSM Tjmax 2 Conditions Tj = 25 °C, IR = 0.1 mA Ts = 80 °C, Tj = 150 °C Tj = 150 °C, 10 ms, sin 180° 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1600 135 13600 2000 1650 150 Unit V A A2s A A °C DIODE IF(DC) = 170 A VRRM = 1600 V Size: 10,3 mm x 10,3 mm Electrical Characteristics Symbol IR VF V(TO) rT Conditions Tj = 25 °C, VRRM Tj = 145 °C, VRRM Tj = 25 °C, IF = 106 A Tj = 125 °C, IF = 106 A Tj = 125 °C Tj = 125 °C Tj = 25 °C, ± 1 A min. typ. max. 0.1 1.1 Unit mA mA V V V mΩ µs 1 0.9 1.21 1.1 0.83 1.6 SKR 10,3 Qu bond trr 29 Thermal Characteristics Features • high current density due to mesa technology • high surge current • compatible to thick wire bonding • compatible to all standard solder processes Symbol Tj Tstg Tsolder Tsolder Rth(j-s) Conditions min. -40 -40 typ. max. 150 150 250 320 Unit °C °C °C °C K/W 10 min. 5 min. soldered on 0,38 mm DCB, reference point on copper heatsink close to the chip 0.38 Typical Applications* • uncontrolled rectifier bridges Mechanical Characteristics Symbol Raster size Area total Anode Cathode Wire bond Package Chips / Package Conditions Values 10.3 x 10.3 106.09 bondable (Al) solderable (Ag/Ni) Al, diameter ≤ 500 µm wafer frame 128 Unit mm2 mm2 pcs SKR © by SEMIKRON Rev. 1 – 19.02.2010 1 SKR 10,3 Qu bond This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 2 Rev. 1 – 19.02.2010 © by SEMIKRON