SKR3_10

SKR 3,5 Qu bond Absolute Maximum Ratings Symbol VRRM IF(AV) it IFSM Tjmax 2 Conditions Tj = 25 °C, IR = 0.05 mA Ts = 80 °C, Tj = 150 °C Tj = 150 °C, 10 ms, sin 180° 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1600 18 200 220 200 150 Unit V A A2s A A °C DIODE IF(DC) = 25 A VRRM = 1600 V Size: 3,5 mm x 3,5 mm SKR 3,5 Qu bond Electrical Characteristics Symbol IR VF V(TO) rT trr Conditions Tj = 25 °C, VRRM Tj = 145 °C, VRRM Tj = 25 °C, IF = 8 A Tj = 125 °C, IF = 8 A Tj = 125 °C Tj = 125 °C Tj = 25 °C, ± 1 A min. typ. max. 0.05 1.1 Unit mA mA V V V mΩ µs 1 0.9 1.21 1.1 0.83 20.8 20 Features • high current density due to mesa technology • high surge current • compatible to thick wire bonding • compatible to all standard solder processes Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-s) 10 min. 5 min. soldered on 0,38 mm DCB, reference point on copper heatsink close to the chip 2.32 Conditions min. -40 -40 typ. max. 150 150 250 320 Unit °C °C °C °C K/W Typical Applications* • uncontrolled rectifier bridges Mechanical Characteristics Symbol Raster size Area total Anode Cathode Wire bond Package Chips / Package Conditions Values 3.5 x 3.5 12.25 bondable (Al) solderable (Ag/Ni) Al, diameter ≤ 500 µm wafer frame 1229 Unit mm2 mm2 pcs SKR © by SEMIKRON Rev. 1 – 19.02.2010 1 SKR 3,5 Qu bond This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 2 Rev. 1 – 19.02.2010 © by SEMIKRON