SKT24-3

SKT 24,3 Qu ZG bond. Absolute Maximum Ratings Symbol VRRM VDRM IT(AV) ITSM i2t Tjmax Conditions Tj = 25 °C, Tj = 25 °C, ID = 0.5 mA Tc = 80 °C, Tj = 130 °C Tj = 130 °C, 10 ms, sin 180° Tj = 130 °C, 10 ms, sin 180° Values 1600 1600 400 8200 336200 130 Unit V V A A A2s °C THYRISTOR IT(DC) = 480 A VRRM = 1600 V Size: 24,3 mm x 24,3 mm Central gate SKT 24,3 Qu ZG bond. Electrical Characteristics Symbol VT VT(TO) rT IGT VGT IGD VGD IH IL Conditions Tj = 130 °C, IT = 680 A Tj = 130 °C Tj = 130 °C Tj = 25 °C Tj = 25 °C Tj = 115 °C Tj = 130 °C Tj = 25 °C Tj = 25 °C min. typ. max. 1.2 0.85 0.53 150 1.98 Unit V V mΩ mA V mA V 11 0.25 220 550 Features • high current density due to double mesa technology • high surge current • compatible to thick wire bonding • compatible to all standard solder processes mA mA Dynamic Characteristics Symbol tq (di/dt)cr (dv/dt)cr Conditions Tj = 130 °C Tj = 130 °C Tj = 130 °C min. typ. 150 max. Unit µs Typical Applications* • conrolled rectifier circuits • solid state relays 130 1000 A/µs V/µs Thermal Characteristics Symbol Tj Tstg Tsolder Rth(j-c) Semipack 3 assembly 0.091 Conditions min. -40 -40 typ. max. 130 130 255 Unit °C °C °C K/W Mechanical Characteristics Symbol Raster size Area total Anode Gate and Cathode Wire bond Package Chips / Package Conditions Values 24.3 x 24.3 590 solderable (Ag/Ni) bondable (Al) Al,diameter ≤ 500µm tray 9 Unit mm2 mm2 pcs SKT © by SEMIKRON Rev. 0 – 19.02.2010 1 SKT 24,3 Qu ZG bond. This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 2 Rev. 0 – 19.02.2010 © by SEMIKRON