SKYPER42R

SKYPER 42 R Absolute Maximum Ratings Symbol Vs ViH ViL IoutPEAK IoutAVmax fmax Conditions Supply voltage primary Input signal voltage (HIGH) Input signal voltage (LOW) Output peak current Output average current Max. switching frequency Collector emitter voltage sense across the IGBT Rate of rise and fall of voltage secondary to primary side Isolation test voltage input - output (AC, rms, 2s) Partial discharge extinction voltage, rms, QPD 10pC Isolation test voltage output 1 - output 2 (AC, rms, 2s) Minimum rating for external RGon Minimum rating for external RGoff Max. rating for output charge per pulse Operating temperature Storage temperature Values 16 Vs + 0.3 GND - 0.3 30 150 100 1700 100 4000 1500 1500 0.8 0.8 50 -40 ... 85 -40 ... 85 Unit V V V A mA kHz V kV/µs V V V : : µC °C °C SKYPER ® VCE dv/dt Visol IO IGBT Driver Core SKYPER 42 R Preliminary Data VisolPD Visol12 Features • • • • • • • • Two output channels Integrated potential free power supply Under voltage protection Drive interlock top / bottom Dynamic short cirucit protection Shut down input Failure management IEC 60068-1 (climate) 40/085/56, no condensation and no dripping water permitted, non-corrosive, climate class 3K3 acc. EN60721 RGon min RGoff min Qout/pulse Top Tstg Characteristics Symbol Vs Conditions Supply voltage primary side Supply current primary (no load) Supply current primary side (max.) Input signal voltage on / off Input treshold voltage HIGH Input threshold voltage (LOW) Input resistance (switching/HALT signal) Turn on output voltage Turn off output voltage Asic system switching frequency Input-output turn-on propagation time Input-output turn-off propagation time Error input-output propagation time Top-Bot interlock dead time Coupling capacitance prim sec weight min. 14.4 typ. 15 125 max. 15.6 800 Unit V mA mA V V V Typical Applications* • Driver for IGBT modules in bridge circuits in industrial application • DC bus voltage up to 1200V ISO Vi VIT+ VIT- 15 / 0 12.3 4.6 10 15 -8 8 1.1 1.1 2.3 9 2 3 Footnotes Isolation test voltage with external high voltage diode The isolation test is not performed as a series test at SEMIKRON The driver power can be expanded to 50µC with external boost capacitors Isolation coordination in compliance with EN50178 PD2 Operating temperature is real ambient temperature around the driver core Degree of protection: IP00 RIN VG(on) VG(off) fASIC td(on)IO td(off)IO td(err) tTD Cps w k: V V MHz µs µs µs µs µs pF g tpERRRESET Error reset time MTBF 2.1 106h This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. Driver Core © by SEMIKRON Rev. 5 – 05.04.2011 1 SKYPER® 42 R Technical Explanations Revision Status: Prepared by: 05 preliminary Johannes Krapp Related Documents: title: Data Sheet SKYPER 42 R This Technical Explanation is valid for the following parts: part number: date code (YYWW): L5054301 >CW16 SKYPER® 42 R Content 1. 2. 2.1. 2.2. 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. 3.8. 3.9. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 5. 5.1. 5.2. 6. 7. Introduction .............................................................................................................................................. 2 Application and Handling Instructions.................................................................................................. 3 General Instructions ................................................................................................................................... 3 Mechanical Instructions ............................................................................................................................. 3 Driver Interface ........................................................................................................................................ 5 Controller Interface – Primary Side Pinning .............................................................................................. 5 Controller Interface – Primary Side Connection ........................................................................................ 6 Module interface – Secondary Side ........................................................................................................... 7 Module interface – Secondary Side Connection ....................................................................................... 8 Power supply - Primary.............................................................................................................................. 9 Gate driver signals – Primary .................................................................................................................... 9 Shut Down Input (SDI) - Primary ............................................................................................................. 10 Gate resistors - Secondary ...................................................................................................................... 10 External Boost Capacitors (BC) -Secondary ........................................................................................... 11 Protection features ................................................................................................................................ 11 Failure Management ................................................................................................................................ 11 Under Voltage Protection of driver power supply (UVP) ......................................................................... 12 Short Pulse Suppression (SPS) .............................................................................................................. 12 Dead Time generation (Interlock TOP / BOT) (DT) ................................................................................. 12 Dynamic Short Circuit Protection by VCEsat monitoring (DSCP) ........................................................... 13 Electrical Characteristic ........................................................................................................................ 15 Driver Performance.................................................................................................................................. 15 Insulation ................................................................................................................................................. 15 Environmental Conditions .................................................................................................................... 16 Marking ................................................................................................................................................... 17 1 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R Please note: Unless otherwise specified, all values in this technical explanation are typical values. Typical values are the average values expected in large quantities and are provided for information purposes only. These values can and do vary in different applications. All operating parameters should be validated by user’s technical experts for each application. 1. Introduction The SKYPER 42 core constitutes an interface between IGBT modules and the controller. This core is a half bridge driver. Basic functions for driving, potential separation and protection are integrated in the driver. Thus it can be used to build up a driver solution for IGBT modules. SKYPER 42 R is developed for systems in the power range of 1 MVA – 8 MVA. Two output channels Up to 50 µC gate charge Integrated potential free power supply for the secondary side Short Pulse Suppression (SPS) Under Voltage Protection (UVP) Drive interlock (dead time) top / bottom (DT) Dynamic Short Circuit Protection (DSCP) by VCE monitoring and direct switch off Shut Down Input (SDI) Failure Management Expandable by External Boost Capacitors (BC) DC bus voltage up to 1200V SKYPER 42 R Block diagram of SKYPER 42 R 2 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R 2. Application and Handling Instructions 2.1. General Instructions Please provide for static discharge protection during handling. As long as the driver is not completely assembled, the input terminals have to be short-circuited. Persons working with devices have to wear a grounded bracelet. Any synthetic floor coverings must not be statically chargeable. Even during transportation the input terminals have to be short-circuited using, for example, conductive rubber. Worktables have to be grounded. The same safety requirements apply to MOSFET- and IGBT-modules. W hen first operating a newly developed circuit, SEMIKRON recommends to apply low collector voltage and load current in the beginning and to increase these values gradually, observing the turn-off behaviour of the free-wheeling diode and the turn-off voltage spikes generated across the IGBT. An oscillographic control will be necessary. Additionally, the case temperature of the module has to be monitored. When the circuit works correctly under rated operation conditions, short-circuit testing may be done, starting again with low collector voltage. 2.2. Mechanical Instructions Dimensions – 69 x 80 x 19 + Holes – bottom view 3 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R For integrating the SKYPER 42 R driver core in to an inverter system an adaptor board has to be built. SEMIKRON offers a wide range of adaptor boards, e.g. for SEMiX, Semitrans or SKiM modules. SEMIKRON offers in addition a customer specific adaptor board on demand. Please contact your responsible sales for further information. Adaptor boards for SKYPER 42 R SKYPER 42 R can be plugged or soldered on the adaptor board. Soldering Hints The temperature of the solder must not exceed 260° and solder time must not exceed 10 seconds. C, The ambient temperature must not exceed the specified maximum storage temperature of the driver. The solder joints should be in accordance to IPC A 610 Revision D (or later) - Class 3 (Acceptability of Electronic Assemblies) to ensure an optimal connection between driver core and printed circuit board. The driver is not suited for hot air reflow or infrared reflow processes. Use of Support Posts The connection between driver core and printed circuit board should be mechanical reinforced by using support posts. The driver board has got three holes for supports posts. Using support posts with external screw thread improves mechanical assembly. Product information of suitable support posts and distributor contact information is available at e.g. http://www.richco-inc.com or http://www.ettinger.de. 4 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R 3. Driver Interface 3.1. Controller Interface – Primary Side Pinning Connector X10, X11 (RM2,54, 10pin) Connectors ±0,25mm unless otherwise noted PIN X10:01 Signal Reserved Function Specification X10:02 Reserved LOW = NO ERROR; open collector output; max. 30V / 15mA (external pull up resistor necessary) 5V logic; LOW active; X10:03 PRIM_nERROR_OUT ERROR output X10:04 PRIM_nERROR_IN ERROR input High Max = 3,8V; Low Min = 1,5V; X10:05 PRIM_PWR_GND GND for power supply and GND for digital signals X10:06 PRIM_PWR_GND GND for power supply and GND for digital signals Digital 15 V; 10 kOhm impedance; LOW = TOP switch off; HIGH = TOP switch on Digital 15 V; 10 kOhm impedance; LOW = BOT switch off; HIGH = BOT switch on Stabilised +15V ±4% X10:07 PRIM_TOP_IN Switching signal input (TOP switch) X10:08 PRIM_BOT_IN Switching signal input (BOTTOM switch) X10:09 PRIM_PWR_15P Drive core power supply X10:10 X11:01, 02, 05-08 X11:03, 04,09,10 PRIM_PWR_15P Drive core power supply Stabilised +15V ±4% Reserved PRIM_PWR_GND GND for power supply and GND for digital signals 5 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R 3.2. Controller Interface – Primary Side Connection Application example Pins X10:01-02 and X11:01-02; X11:05-08 are reserved. Do not connect. Non binding recommendation for: RERROR=4,75k ; CFILTER=1nF. A capacitor is connected to the input of the gate driver to obtain high noise immunity. With current limited line drivers, this capacitor can cause a small delay of a few ns. The capacitors have to be placed as close to the gate driver interface as possible. Signal cable should be placed as far away as possible from power terminals, power cables, ground cables, DC-link capacitors and all other noise sources. Control signal cable should not run parallel to power cable. The minimum distance between control signal cable and power cable should be 30cm and the cables should cross vertically only. It is recommended that all cables be kept close to ground (e.g. heat sink or the likes). In noise intensive applications, it is recommended that shielded cables or fibre optic interfaces be used to improve noise immunity. Use a low value capacitor (1nF) between signal and power supply ground of the gate driver for differentialmode noise suppression. 6 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R 3.3. Module interface – Secondary Side Connector X100 / X200 (RM2,54, 10pin) Connectors ±0,25mm unless otherwise noted PIN X100:01 X100:02 X100:03 X100:04 X100:05 X100:06 X100:07 X100:08 X100:09 X100:10 X200:01 X200:02 X200:03 X200:04 X200:05 X200:06 X200:07 X200:08 X200:09 X200:10 Signal SEC_TOP_VCE_CFG SEC_TOP_VCE_IN SEC_TOP_15P SEC_TOP_15P SEC_TOP_GND SEC_TOP_IGBT_ON SEC_TOP_GND SEC_TOP_IGBT_OFF SEC_TOP_8N SEC_TOP_8N SEC_BOT_VCE_CFG SEC_BOT_VCE_IN SEC_BOT_15P SEC_BOT_15P SEC_BOT_GND SEC_BOT_IGBT_ON SEC_BOT_GND SEC_BOT_IGBT_OFF SEC_BOT_8N SEC_BOT_8N Function Input reference voltage adjustment for Vce monitoring TOP Input VCE monitoring TOP Output power supply for external buffer capacitors Output power supply for external buffer capacitors GND for power supply and GND for digital signals Switch on signal TOP IGBT GND for power supply and GND for digital signals Switch off signal TOP IGBT Output power supply for external buffer capacitors Output power supply for external buffer capacitors Input reference voltage adjustment for Vce monitoring BOT Input VCE monitoring BOT Output power supply for external buffer capacitors Output power supply for external buffer capacitors GND for power supply and GND for digital signals Switch on signal BOT IGBT GND for power supply and GND for digital signals Switch off signal BOT IGBT Output power supply for external buffer capacitors Output power supply for external buffer capacitors Specification Stabilised +15V Stabilised +15V Stabilised -7V Stabilised -7V Stabilised +15V Stabilised +15V Stabilised -7V Stabilised -7V 7 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R 3.4. Module interface – Secondary Side Connection Application example SKYPER 42 R USER INTERFACE X100:01 Reference for VCE X100:02 Input VCE Error Processing TOP - VCE monitoring X100:03;04 PS for BC,+15V 18,2k X X100:05 GND 1 X100:08 Switch on 0 X100:07 GND 0 X100:09 Switch off 16 F 16 F X100:09;10 PS for BC,-7V 337pF RGON Power Driver TOP RGOFF 10k Power Supply TOP Power Supply BOT X200:01 Reference for VCE X200:02 Input VCE X200:03;04 PS for BC,+15V 18,2k 337pF RGON Power Driver BOT X X200:05 GND 2 X200:08 Switch on 0 0 X200:07 GND X200:09 Switch off RGOFF 10k 16 F Error Processing BOT - VCE monitoring 16 F X200:09;10 PS for BC,-7V Application example for 1200V IGBT, VCEref=6,7V, tBL=2,3µs, Qout/pulse = 4µC. Any parasitic inductances within the DC-link have to be minimized. Overvoltages may be absorbed by C- or RCD-snubbers between main terminals (plus and minus) of the power module. Make power patterns short and thick to reduce stray inductance and stray resistance. The connecting leads between gate driver and IGBT module must be kept as short as possible (max. 20cm). Gate wiring for top and bottom IGBT or other phases must not be bundled together. It is recommended that a 10k resistor (RGE) be placed between the gate and emitter. If wire connection is used, do not place the RGE between printed circuit board and IGBT module. RGE has to be placed very close to the IGBT module. Use a suppressor diode (back-to-back Zener diode) between gate and emitter. The diode has to be placed very close to the IGBT module. The use of a capacitor (CGE) between gate and emitter can be advantageous, even for high-power IGBT modules and parallel operation. The CGE should be approximately 10% of the CGE of the IGBT used. The CGE has to be placed very close to the IGBT module. Current loops must be avoided. External boost capacitors must be placed as close to the gate driver as possible in order to minimize parasitic inductance. 8 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R 3.5. Power supply - Primary Requirements of the auxiliary power supply Regulated power supply Maximum rise time of auxiliary power supply Power on reset completed after +15V ±4% 150ms 56ms Please note: Do not apply switching signals during power on reset. The same power supply used for SKYPER 32 can be taken The supplying switched mode power supply may not be turned-off for a short time as consequence of its current limitation. Its output characteristic needs to be considered. Switched mode power supplies with fold-back characteristic or hiccup-mode can create problems if no sufficient over current margin is available. The voltage has to rise continuously. If the power supply is able to provide a higher current, a peak current will flow in the first instant to charge up the input capacitances on the driver. Its peak current value will be limited by the power supply and the effective impedances (e.g. distribution lines), only. The driver error signal PRIM_nERROR_OUT is operational after 56ms. Without any error present, the error signal will be reset. To assure a high level of system safety the TOP and BOT signal inputs should stay in a defined state (OFF state, LOW) during driver turn-on time. Only after the end of the power-on-reset, IGBT switching operation shall be permitted. 3.6. Gate driver signals – Primary The signal transfer to each IGBT is made with pulse transformers, used for switching on and switching off of the IGBT. The inputs have a Schmitt Trigger characteristic and a positive / active high logic (input HIGH = IGBT on; input LOW = IGBT off). It is mandatory to use circuits which switch active to +15V and 0V. Pull up and open collector output stages must not be used for TOP / BOT control signals. It is recommended choosing the line drivers according to the demanded length of the signal lines. The duty cycle of the driver can be adjusted between 0 – 100%. It is not permitted to apply switching pulses shorter than 1µs. TOP / BOT Input A capacitor is connected to the input to obtain high noise immunity. This capacitor can cause for current limited line drivers a little delay of few ns, which can be neglected. The capacitors have to be placed as close as possible to the driver interface. 9 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R 3.7. Shut Down Input (SDI) - Primary The shut down input / error input signal can gather error signals of other hardware components for switching off the IGBT (input HIGH = no turn-off; input LOW = turn-off). Connection SDI Hints A LOW signal at PRIM_nERROR_IN will set the error latch and force the output PRIM_nERROR_OUT into HIGH state. Switching pulses from the controller will be ignored. The SDI function can be disabled by no connection or connecting to 5V. 3.8. Gate resistors - Secondary The output transistors of the driver are MOSFETs. The sources of the MOSFETs are separately connected to external terminals in order to provide setting of the turn-on and turn-off speed of each IGBT by the external resistors RGon and RGoff. As an IGBT has input capacitance (varying during switching time) which must be charged and discharged, both resistors will dictate what time must be taken to do this. The final value of the resistance is difficult to predict, because it depends on many parameters as DC link voltage, stray inductance of the circuit, switching frequency and type of IGBT. Connection RGon, RGoff Application Hints The gate resistor influences the switching time, switching losses, dv/dt behaviour, etc. and has to be selected very carefully. The gate resistor has to be optimized according to the specific application. By increasing RGon the turn-on speed will decrease. The reverse peak current of the free-wheeling diode will diminish. By increasing RGoff the turn-off speed of the IGBT will decrease. The inductive peak over voltage during turn-off will diminish. In order to ensure locking of the IGBT even when the driver supply voltage is turned off, a resistance (RGE) has to be integrated. Tpically, IGBT modules with a large current rating will be driven with smaller gate resistors and vice versa. Te value of gate resistors will be between the value indicated in the IGBT data sheet and roughly twice this value. In most applications, the turn-on gate resistor RG(on) is smaller than the turn-off gate resistor RG(off). Depending on the individual parameters, RG(off) can be roughly twice the RG(on) value. Place the gate resistances for turn-on and turn-off close together. Please note: Do not connect the terminals SEC_TOP_IGBT_ON with SEC_TOP_IGBT_OFF and SEC_BOT_IGBT_ON with SEC_BOT_IGBT_OFF, respectively. 10 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R 3.9. External Boost Capacitors (BC) -Secondary The rated gate charge of the driver may be increased by additional boost capacitors to drive IGBT with large gate capacitance. Connection External Boost Capacitors Dimensioning of Cboost SKYPER 42 R has internal gate capacitors of 2.5 µC Using external capacitors: 4µF = 1µC The boost capacitors on C15 and C-8 should be chosen with the same values Please consider the maximum rating four output charge per pulse of the gate driver. The external boost capacitors should be connected as close as possible to the gate driver and to have low inductance. 4. Protection features 4.1. Failure Management Any error detected will set the error latch and force the output PRIM_nERROR_OUT into HIGH state. Switching pulses from the controller will be ignored. Connected and switched off IGBTs remain turned off. The switched off IGBTs remain turned off. The output PRIM_nERROR_OUT is an open collector output. For the error evaluation an external pull-upresistor is necessary pulled-up to the positive operation voltage of the control logic (LOW signal = no error present, wire break safety is assured). Open collector error transistor Application hints An external resistor to the controller logic high level is required. The resistor has to be in the range of V / Imax < Rpull_up < 10k . Rest when TOP/BOT signals set to low for tpERRRESET > 9µs PRIM_nERROR_OUT can operate to maximum 30V and can switch a maximum of 15mA. Example: For V = +15V the needed resistor should be in the range Rpull_up = (15V/15mA) … 10k ⇒ 1k … 10k . Please note: The error output PRIM_ERROR_OUT is not short circuit proof. 11 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R 4.2. Under Voltage Protection of driver power supply (UVP) The internally detected supply voltage of the driver has an under voltage protection. Supply voltage Regulated +15V ±4% UVP level Typ 13,5V If the internally detected supply voltage of the driver falls below this level, the IGBTs will be switched off (IGBT driving signals set to LOW). The input side switching signals of the driver will be ignored. The error memory will be set, and the output PRIM_nERROR_OUT changes to the HIGH state. 4.3. Short Pulse Suppression (SPS) This circuit suppresses short turn-on and off-pulses of incoming signals. This way the IGBTs are protected against spurious noise as they can occur due to bursts on the signal lines. Pulses shorter than 625ns are suppressed and all pulses longer than 750ns get through for 100% probability. Pulses with a length in-between 625ns and 750ns can be either suppressed or get through. Pulse pattern – SPS short pulses PRIM_TOP/BOT_IN (HIGH) PRIM_TOP/BOT_IN (LOW) SEC_TOP/BOT_IGBT_ON SEC_TOP/BOT_IGBT_OFF 4.4. Dead Time generation (Interlock TOP / BOT) (DT) The DT circuit prevents, that TOP and BOT IGBT of one half bridge are switched on at the same time (shoot through). The dead time is not added to a dead time given by the controller. Thus the total dead time is the maximum of "built in dead time" and "controller dead time". It is possible to control the driver with one switching signal and its inverted signal. Please note: The generated dead time is fixed at 2 µs and cannot be changed. Please contact your resonsible sales engineer for customization. Pulse pattern – DT The total propagation delay of the driver is the sum of interlock dead time (tTD) and driver input output signal propagation delay (td(on;off)IO) as shown in the pulse pattern. Moreover the switching time of the IGBT chip has to be taken into account (not shown in the pulse pattern). In case both channel inputs (PRIM_TOP_IN and PRIM_BOT_IN) are at high level, the IGBTs will be turned off. If only one channel is switching, there will be no interlock dead time. Please note: No error message will be generated when overlap of switching signals occurs. 12 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R 4.5. Dynamic Short Circuit Protection by VCEsat monitoring (DSCP) The DSCP monitors the collector-emitter voltage VCE of the IGBT during its on-state. The reference voltage VCEref may dynamically be adapted to the IGBTs switching behaviour. Immediately after turn-on of the IGBT, a higher value is effective than in steady state. VCEstat is the steady-state value of VCEref and is adjusted to the required maximum value for each IGBT by an external resistor RCE. It may not exceed 10V. The time constant for the delay (exponential shape) of VCEref may be controlled by an external capacitor CCE. It controls the blanking time tbl which passes after turn-on of the IGBT before the VCEsat monitoring is activated. Reference Voltage (VCEref) Characteristic After tbl has passed, the VCE monitoring will be triggered as soon as VCE > VCEref and will turn off the IGBT. The error memory will be set, and the output PRIM_nERROR_OUT changes to the HIGH state. Possible failure modes are shows in the following pictures. Short circuit during operation Turn on of IGBT too slow * Short circuit during turn on * or adjusted blanking time too short 13 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R Dimensioning of RCE and CCE UDetect.1200V.Typ RConf := 10.5⋅ V⋅ V1 := ⋅ 10.5⋅ V 6.62 V1 = 8.914 V 5.62 ( ) RConf V2 := 5.62 10⋅ kΩ + RConf 10.5⋅ V V2 = 1.868 V UDetect.1700V.Typ RConf := V1⋅ t D := t Durchlauf.Komparator t D = 440 × 10 −9 ( ) RConf 10⋅ kΩ + RConf − V2 t 1 := 5.62⋅ kΩ ⋅ 33⋅ pF t 1 = 185.46× 10 −9 1 s s t Ausblend.1200VTyp RConf , CConf :=   ( ( ) )  RConf ⋅ 10⋅ kΩ   15V − UDetect.1200V.Typ RConf ⋅ CConf + t 1 ⋅ ln   10.5⋅ V − UDetect.1200V.Typ RConf  RConf + 10⋅ kΩ  ( ( ) ) ( (   + tD )   + tD ) t Ausblend.1700VTyp RConf , CConf :=    RConf ⋅ 10⋅ kΩ   15V − UDetect.1700V.Typ RConf ⋅ CConf + t 1 ⋅ ln   10.5⋅ V − UDetect.1700V.Typ RConf  RConf + 10⋅ kΩ  UDetect.1200V.Typ( 18.2⋅ kΩ ) = 6.777 V t Ausblend.1200VTyp ( 18.2⋅ kΩ , 337⋅ pF) = 2.31 × 10 −6 s If the DSCP function is not used, for example during the experimental phase, SEC_TOP_VCE_IN must be connected with SEC_TOP_GND for disabling SCP @ TOP side and SEC_BOT_VCE_IN must be connected with SEC_BOT_GND for disabling SCP @ BOT side. The high voltage during IGBT off state is blocked by a high voltage diode. Connection High Voltage Diode Characteristics Reverse blocking voltage of the diode shall be higher than the used IGBT. Reverse recovery time of the fast diode shall be lower than VCE rising of the used IGBT. Forward voltage of the diode: 1,5V @ 2mA forward current C). (Tj=25° A collector series resistance RVCE (1k connected for 1700V IGBT operation. / 0,4W) must be 14 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R 5. Electrical Characteristic 5.1. Driver Performance The driver is designed for application with half bridges or single modules and a maximum gate charge per pulse < 100C (2,5µC on the driver). The charge necessary to switch the IGBT is mainly depending on the IGBT’s chip size, the DC-link voltage and the gate voltage. This correlation is shown in module datasheets. It should, however, be considered that the driver is turned on at +15V and turned off at -8V. Therefore, the gate voltage will change by 22V during each switching procedure. The medium output current of the driver is determined by the switching frequency and the gate charge. Calculation Switching Frequency Maximum Switching Frequency @ different Gate Charges @ Tamb=25° C 100 kHz fmax = Iout AV max Q GE switching frequency 80 kHz 60 kHz fmax: QGE: Maximum switching frequency * Gate charge of the driven IGBT IoutAVmax: Maximum output average current 40 kHz * @ Tamb=25° C 20 kHz 0 kHz 1 µC 10 µC gate charge 100 µC 5.2. Insulation Magnetic transformers are used for insulation between gate driver primary and secondary side. The transformer set consists of pulse transformers which are used bidirectional for turn-on and turn-off signals of the IGBT and the error feedback between secondary and primary side, and a DC/DC converter. This converter provides a potential separation (galvanic separation) and power supply for the two secondary (TOP and BOT) sides of the driver. Thus, external transformers for external power supply are not required. Creepage and Clearance Distance Creepage Distance Primary to Secondary (Reinforced according to EN50178) Clearance Distance Primary to Secondary (Reinforced according to EN50178) Creepage Distance Secondary to Secondary (according to EN50178) Clearance Distance Secondary to Secondary (according to EN50178) Insulation parameters Climatic Classification Pollution Degree (PD) Maximum altitude (above sea level) Overvoltage category (according to EN50178) Isolation resistance test, Prim-Sec Rated insulation voltage (EN60664-1) mm 12,2 8 6,1 4,1 Rating PD2 2000 meter above sea OVC 3 4000 VDC/AC, rms,2s 8 kV Kat. III 15 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R 6. Environmental Conditions Environmental Condition Operating temperature Storage temperature High humidity Flammability DIN 45930 CECC 50012 VDV 150 DIN 5510 prEN 100 RoHS / WEEE / China RoHS Norm / Standard Parameter -40.. +85 ° C -40.. +85 ° C 85 ° 85% C, Heavy flammable materials only EMC Condition ESD Burst Immunity against external interference Immunity against conducted interference Norm / Standard DIN EN 61000-4-2 DIN EN 61800-3 DIN EN 61000-4-4 DIN EN 61800-3 DIN EN 61000-4-3 DIN EN 61800-3 DIN EN 61000-4-3 DIN EN 61800-3 Values (max.) Parameter 6 kV contact discharge / 8 kV air discharge ≥ 2kV on adaptor board for signal lines ≥ 30V/m 30MHz – 1000 MHz ≥ 20V 150kHz – 80MHz Conditions Vibration Sinusoidal 20Hz … 500Hz, 5g, 2h per axis (x, y, z) Random 20Hz … 2000Hz, 5g, 2 h per axis (x, y, z) 6000 Shocks (6 axis; +-x, +-y, +-z, 1000 shocks per axis), 30g, 18ms - Connection between driver core and printed circuit board mechanical reinforced by using support posts. Shock 16 2011-04-04 – Rev05 © by SEMIKRON SKYPER® 42 R 7. Marking Every driver core is marked. The marking contains the following items. DISCLAIMER SEMIKRON reserves the right to make changes without further notice herein to improve reliability, function or design. Information furnished in this document is believed to be accurate and reliable. However, no representation or warranty is given and no liability is assumed with respect to the accuracy or use of such information. SEMIKRON does not assume any liability arising out of the application or use of any product or circuit described herein. Furthermore, this technical information may not be considered as an assurance of component characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. This document supersedes and replaces all information previously supplied and may be superseded by updates without further notice. SEMIKRON products are not authorized for use in life support appliances and systems without the express written approval by SEMIKRON. www.SEMIKRON.com 17 2011-04-04 – Rev05 © by SEMIKRON