BT136-D

Preliminary SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol BT136-D Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ High Commutation dv/dt ◆ Sensitive Gate Triggering 4 Mode ◆ Non-isolated Type ◆ ◆ ○ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ General Description This device is sensitive gate triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. TO-220 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 107 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t = 10ms 4 25/27 3.1 5 Over any 20ms period 0.5 2 5 - 40 ~ 125 - 40 ~ 150 Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Units V A A A2 s W W A V °C °C Mar, 2004. Rev. 0 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/5 BT136-D Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Ⅰ Ⅱ Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Ⅲ Ⅳ Ⅰ Ⅱ Gate Trigger Voltage Ⅲ Ⅳ Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -0.75 A/ms, VD=2/3 VDRM VD = 6 V, RL=10 Ω ─ ─ 0.2 5.0 ─ ─ ─ ─ ─ ─ 5 ─ 1.5 2.5 ─ ─ ─ 3.0 V VD = 6 V, RL=10 Ω ─ ─ ─ ─ ─ ─ ─ ─ 5 12 1.5 1.5 V Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 5 A, Inst. Measurement Ratings Min. ─ ─ ─ ─ Typ. ─ ─ ─ ─ Max. 0.5 1.7 5 5 Unit IDRM VTM I+GT1 I -GT1 mA V mA V/㎲ mA °C/W 2/5 BT136-D Fig 1. Gate Characteristics 10 1 Fig 2. On-State Voltage 10 2 VGK = 5V PGK = 5W On-State Current [A] PG(AV) = 0.5W Gate Voltage [V] 10 1 25℃ IGM=2A 10 0 125 C 10 0 o 25 C o VGD = 0.2V 10 -1 10 1 -1 10 10 2 10 3 0.5 1.0 1.5 2.0 2.5 3.0 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 7 6 130 Fig 4. On State Current vs. Allowable Case Temperature π θ Power Dissipation [W] θ = 150 o o 5 360° θ = 120 θ = 90 θ = 60 θ = 30 o o θ 2π θ = 180 o Allowable Case Temperature [ C] 120 θ = 30 o o o o o 4 3 2 1 0 0 θ : Conduction Angle o o π 110 θ θ = 60 2π θ = 90 θ 360° θ = 120 θ = 150 o θ = 180 θ 100 0 : Conduction Angle 1 2 3 4 5 1 2 3 4 5 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature 35 10 30 Surge On-State Current [A] 25 60Hz o 20 VGT (25 C) VGT (t C) o 1 15 50Hz 10 5 0 0 10 10 1 10 2 10 3 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/5 BT136-D Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance 10 10 1 IGT (25 C) I I 1 + GT1 GT1 GT3 Transient Thermal Impedance [ C/W] IGT (t C) o o o I 10 0 I + GT3 0.1 -50 10 0 50 100 o -1 150 10 -3 10 -2 10 -1 10 0 10 1 10 2 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω 10Ω 10Ω ▼ ▲ 6V ● ▼ ▲ A ● ▼ ▲ A ● 6V 6V A ▼ ▲ RG 6V ● A V ● RG V ● RG V ● V ● RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ Test Procedure Ⅳ 4/5 BT136-D TO-220 Package Dimension mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O Min. 9.7 6.3 9.0 12.8 1.2 Max. 10.1 6.7 9.47 13.3 1.4 Min. 0.382 0.248 0.354 0.504 0.047 Max. 0.398 0.264 0.373 0.524 0.055 1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024 0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142 φ E B A H I φ F C M G 1 D 2 3 L 1. T1 2. T2 3. Gate N O J K 5/5