BT139F-600

SemiWell Semiconductor BT139-600 Symbol ○ Bi-Directional Triode Thyristor Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 16 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) ◆ ◆ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ General Description This device is suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. TO-220 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 100°C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms 16 145/155 105 5.0 Over any 20ms period 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 2.0 Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass Units V A A A2 s W W A V °C °C g Jan, 2004. Rev. 0 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/5 BT139-600 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -6.0 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Ω Gate Trigger Current VD = 6 V, RL=10 Ω Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 20 A, Inst. Measurement Ratings Min. ─ ─ ─ ─ ─ ─ ─ ─ 0.2 10 ─ ─ Typ. ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ 20 ─ Max. 2.0 1.6 25 25 25 1.5 1.5 1.5 ─ ─ ─ 1.2 Unit IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) mA V mA V V V/㎲ mA °C/W 2/5 BT139-600 Fig 1. Gate Characteristics Fig 2. On-State Voltage 10 1 VGM (10V) On-State Current [A] 10 2 Gate Voltage [V] PGM (5W) PG(AV) (0.5W) 25 ℃ 10 0 TJ = 125 C 10 1 o IGM (2A) TJ = 25 C 10 0 o VGD (0.2V) 10 -1 10 1 10 2 10 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 25 Fig 4. On State Current vs. Allowable Case Temperature 130 Power Dissipation [W] 20 π θ 360° θ 2π θ = 180 o θ = 150 θ = 120 θ = 90 θ = 60 θ = 30 o o o o Allowable Case Temperature [ oC] 125 120 115 110 15 θ : Conduction Angle 10 θ = 30 π θ θ 2π o θ = 60 θ = 90 o o o o 105 100 95 0 360° 5 θ : Conduction Angle θ = 120 o θ = 150 o θ = 180 12 16 20 0 0 2 4 6 8 10 12 14 16 18 20 4 8 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 200 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 Surge On-State Current [A] 150 VGT (t C) o o 60Hz 100 VGT (25 C) 1 50 50Hz 0 0 10 10 1 10 2 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/5 BT139-600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 1 Fig 8. Transient Thermal Impedance Transient Thermal Impedance [ C/W] o 10 0 IGT (25 C) IGT (t C) 1 I I o + GT1 _ GT1 o 10 -1 I _ GT3 0.1 -50 0 50 100 o 150 10 -2 10 -3 10 -2 10 -1 10 0 10 1 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω 10Ω ▼ ▲ 6V ● ▼ ▲ A ● ▼ ▲ A ● 6V 6V A V ● RG V ● RG V ● RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ 4/5 BT139-600 TO-220 Package Dimension mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O Min. 9.7 6.3 9.0 12.8 1.2 Max. 10.1 6.7 9.47 13.3 1.4 Min. 0.382 0.248 0.354 0.504 0.047 Max. 0.398 0.264 0.373 0.524 0.055 1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024 0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142 φ E B A H I φ F C M G 1 D 2 3 L 1. T1 2. T2 3. Gate N O J K 5/5