BT236-D

Preliminary SemiWell Semiconductor Sensitive Gate Triacs Symbol BT236-D Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 6 A ) ◆ High Commutation dv/dt ◆ Sensitive Gate Triggering 4 Mode ◆ Non-isolated Type ◆ ◆ ○ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ General Description This device is sensitive gate triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, AC switching applications, phase control application such as fan speed, light controllers and home appliance equipment. TO-220 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Sine wave, 50 to 60 Hz, Gate open TC =101 °C, Full Sine wave One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp = 10ms TC = 101 °C, Pulse width ≤ 1.0us Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Ratings 600 6.0 60/66 18 3.0 0.3 2.0 10 - 40 ~ 125 - 40 ~ 150 Units V A A A 2s W W A V °C °C Mar, 2004. Rev. 0 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/5 BT236-D Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Ⅰ Ⅱ Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-a) Ⅲ Ⅳ Ⅰ Ⅱ Gate Trigger Voltage Ⅲ Ⅳ Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Thermal Impedance Junction to case Junction to Ambient TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -0.5 A/ms, VD=2/3 VDRM VD = 6 V, RL=10 Ω ─ ─ 0.2 5 ─ ─ ─ ─ 1.6 ─ ─ ─ ─ ─ 1.4 2.0 ─ ─ 10 2.8 60 V VD = 6 V, RL=10 Ω ─ ─ ─ ─ ─ 8 ─ ─ 5 12 1.4 1.4 V Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 8 A, Inst. Measurement Ratings Min. ─ ─ ─ ─ Typ. ─ ─ ─ ─ Max. 1.0 1.6 5 5 Unit IDRM VTM I+GT1 I -GT1 mA V mA V/㎲ mA °C/W °C/W ※ Notes : 1. Pulse Width ≤ 300us , Duty cycle ≤ 2% 2/5 BT236-D Fig 1. Gate Characteristics 10 10 1 Fig 2. On-State Voltage 2 VGM (10V) PGM (3W) PG(AV) (0.3W) 25 ℃ I+GT3 25 ℃ I+GT1 I -GT1 I -GT3 VGD(0.2V) 10 -1 On-State Current [A] Gate Voltage [V] 10 1 TJ = 125 C o IGM (2A) 10 0 TJ = 25 C 10 0 o 10 0 10 1 10 2 10 3 10 4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation Allowable Case Temperature [ oC] 10 9 Fig 4. On State Current vs. Allowable Case Temperature 130 Power Dissipation [W] 8 7 π θ 360° θ 2π θ = 180 o θ = 150 θ = 120 θ = 90 o o o o o 120 6 5 4 3 2 1 0 0 θ : Conduction Angle θ = 60 θ = 30 π 110 θ 2π θ = 30 θ = 60 θ = 90 o o o o θ 360° θ 100 : Conduction Angle θ = 120 o θ = 150 o θ = 180 3 4 5 6 7 1 2 3 4 5 6 7 8 0 1 2 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 80 70 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 3 Surge On-State Current [A] 60Hz 50 40 30 20 10 0 0 10 o X 100 (%) 60 V V GT1 10 2 + GT1 - V GT3 50Hz VGT (25 C) VGT (t C) o V 1 + GT3 10 1 10 2 10 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/5 BT236-D Fig 7. Gate Trigger Current vs. Junction Temperature 10 3 Fig 8. Transient Thermal Impedance 10 I 10 2 + GT1 GT1 GT3 I I Transient Thermal Impedance [ C/W] IGT (25 C) IGT (t C) o o X 100 (%) o 1 I 10 1 + GT3 -50 0 50 100 o 150 10 -2 10 -1 10 0 10 1 10 2 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω 10Ω 10Ω ▼ ▲ 6V ● ▼ ▲ A ● ▼ ▲ A ● 6V 6V A ▼ ▲ RG 6V ● A V ● RG V ● RG V ● V ● RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ Test Procedure Ⅳ 4/5 BT236-D TO-220 Package Dimension Dim. A B C D E F G H I J K L M N O Min. 9.7 6.3 9.0 12.8 1.2 mm Typ. Max. 10.1 6.7 9.47 13.3 1.4 Min. 0.382 0.248 0.354 0.504 0.047 Inch Typ. Max. 0.398 0.264 0.373 0.524 0.055 1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024 0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142 φ E B A H I φ F C M G 1 D 2 3 L 1. T1 2. T2 3. Gate N O J K 5/5