BTA12-600B

Preliminary SemiWell Semiconductor BTA12-600B UL : E228720 Symbol ○ Bi-Directional Triode Thyristor Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) ◆ ◆ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ General Description This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. This device is approved to comply with applicable requirements by Underwriters Laboratories Inc. TO-220F 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 79 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 12 119/130 71 5.0 0.5 2.0 10 A.C. 1 minute 1500 - 40 ~ 125 - 40 ~ 150 2.0 Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Mass Units V A A A2 s W W A V V °C °C g Mar, 2004. Rev. 0 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/6 BTA12-600B Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -6.0 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Ω Gate Trigger Current VD = 6 V, RL=10 Ω Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 20 A, Inst. Measurement Ratings Min. ─ ─ ─ ─ ─ ─ ─ ─ 0.2 10 ─ ─ Typ. ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ 20 ─ Max. 2.0 1.4 30 30 30 1.5 1.5 1.5 ─ ─ ─ 3.3 Unit IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) mA V mA V V V/㎲ mA °C/W 2/6 BTA12-600B Fig 1. Gate Characteristics Fig 2. On-State Voltage 10 1 VGM (10V) On-State Current [A] 10 2 Gate Voltage [V] PGM (5W) PG(AV) (0.5W) 25 ℃ 10 0 TJ = 125 C 10 1 o IGM (2A) TJ = 25 C 10 0 o VGD (0.2V) 10 -1 10 1 10 2 10 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 16 14 Fig 4. On State Current vs. Allowable Case Temperature 130 Power Dissipation [W] π θ 360° θ 2π 12 10 8 6 4 2 0 0 2 θ = 180 o θ = 150 o θ = 120 θ = 90 θ = 60 θ = 30 o o o o Allowable Case Temperature [ oC] 120 110 θ : Conduction Angle 100 π 90 θ θ = 30 2π o o θ = 60 θ θ θ θ 8 10 12 θ 360° 80 θ : Conduction Angle = 90 o = 120o = 150 o = 180 14 o 4 6 8 10 12 14 70 0 2 4 6 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 200 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 Surge On-State Current [A] 150 VGT (t C) o o 60Hz 100 VGT (25 C) V 1 _ GT3 V V + GT1 _ GT1 50 50Hz 0 0 10 10 1 10 2 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/6 BTA12-600B Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 Fig 8. Transient Thermal Impedance 1 I I + GT1 _ GT1 Transient Thermal Impedance [ C/W] IGT (25 C) IGT (t C) o o o 1 I 0.1 -50 _ GT3 0 50 100 o 150 0.1 -2 10 10 -1 10 0 10 1 10 2 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω 10Ω ▼ ▲ 6V ● ▼ ▲ A ● ▼ ▲ A ● 6V 6V A V ● RG V ● RG V ● RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ 4/6 BTA12-600B TO-220F Package Dimension mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57 Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83 Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101 Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111 2.54 5.08 2.51 1.25 0.45 0.6 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024 0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059 φ φ1 φ2 F B A E H I φ φ1 φ2 C L 1 D 2 3 J K M G 1. T1 2. T2 3. Gate N O 5/6 BTA12-600B TO-220F Package Dimension, Forming mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O P Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57 Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83 Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101 Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111 2.54 5.08 2.51 1.25 0.45 0.6 5.0 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024 0.100 0.200 0.103 0.061 0.025 0.039 0.197 0.146 0.126 0.059 φ φ1 φ2 F B A E H I φ φ1 φ2 C L 1 2 3 N J K O P M G D 1. T1 2. T2 3. Gate 6/6