MCK100-8

SemiWell Semiconductor MCK100-8 Symbol 3. Gate ○ ○ Sensitive Gate Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 0.8 A ) ◆ Low On-State Voltage (1.2V(Typ.)@ ITM) ◆ ▼ 1 2 3 ○ 2. Anode 1. Cathode SOT- 89 General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 Half Sine Wave : TC = 112 °C All Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms TA =25°C, Pulse Width ≤ 1.0㎲ TA =25°C, t = 8.3ms 0.5 0.8 10 0.415 2 0.1 1 5.0 - 40 ~ 125 - 40 ~ 150 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Units V A A A A2 s W W A V °C °C Apr, 2003. Rev. 0 1/5 Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved. MCK100-8 Electrical Characteristics Symbol Items ( TC = 25 °C unless otherwise noted ) Conditions VAK = VDRM or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 125 °C ( ITM = 1 A, Peak ) VAK = 6 V, RL=100 Ω Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current Peak On-State Voltage (1) ─ ─ ─ ─ ─ 1.2 10 200 1.7 ㎂ VTM V IGT Gate Trigger Current (2) TC = 25 °C TC = - 40 °C VD = 7 V, RL=100 Ω ─ ─ ─ ─ 200 500 ㎂ VGT Gate Trigger Voltage (2) TC = 25 °C TC = - 40 °C VAK = 12 V, RL=100 Ω VD = 0.67 VDRM , Exponential waveform, TJ=125°C ITM = 2A ; Ig = 10mA VAK = 12 V, Gate Open Initiating Curent = 50mA TC = 25 °C TC = - 40 °C Junction to case Junction to Ambient RGK = 1000 Ω TC = 125 °C ─ ─ 0.2 ─ ─ ─ 0.8 1.2 ─ V VGD Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage Critical Rate of Rise On-State Current V dv/dt 500 800 ─ V/㎲ di/dt ─ ─ 50 A/㎲ IH Holding Current ─ ─ ─ ─ 2 ─ ─ ─ 5.0 10 15 125 mA Rth(j-c) Rth(j-a) Thermal Impedance Thermal Impedance °C/W °C/W ※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. Does not include RGK in measurement. 2/5 MCK100-8 Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature 160 Max. Allowable Case Temperature [ C] 10 1 o 140 VGM(5V) PGM(2W) θ = 180 120 100 80 o Gate Voltage [V] PG(AV)(0.1W) IGM(1A) 10 0 π 60 40 20 0 0.0 2π 25 C o θ 360° VGD(0.2V) 10 -1 θ : Conduction Angl e 10 0 10 1 10 2 10 3 10 4 0.1 0.2 0.3 0.4 0.5 0.6 Gate Current [mA] Average On-State Current [A] Fi g 3. Typi cal Forward Voltage 10 10 2 Fi g 4. Th ermal R esponse Transient Thermal Impedance [ C/W] On-State Current [A] o 1 125 C o 10 1 Rθ (J-C) 25 C o 0.1 0.5 1.0 1.5 2.0 2.5 3.0 10 0 10 -2 10 -1 10 0 10 1 10 2 10 3 On-State Voltage [V] Time (sec) Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature 10 10 Fi g 6. Typi cal Gate Tri gger Current vs. Junction Temperature VGT(toC) VGT(25oC) 1 0.1 -50 IGT(25 C) IGT(t C) o o 1 0 50 100 o 150 0.1 -50 0 50 100 o 150 Junction Temperature[ C] Junction Temperature[ C] 3/5 MCK100-8 Fi g 7. Typi cal Ho ldi ng C urrent 10 0.7 θ = 180 o Fig 8. Power Dissipation Max. Average Power Dissipation [W] 0.6 θ = 90 0.5 θ = 30 0.4 o θ = 120 o o θ = 60 o IH(25oC) IH(t C) 1 o 0.3 0.2 0.1 0.1 -50 0 50 100 o 150 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Junction Temperature[ C] Average On-State Current [A] 4/5 MCK100-8 SOT- 89 Package Dimension mm Typ. Inch Typ. Dim. A B B1 C C1 D D1 E e e1 H L R Min. 1.40 0.36 0.32 0.35 0.35 4.40 1.40 2.30 2.90 3.94 0.90 Max. 1.60 0.56 0.52 0.44 0.44 4.60 1.80 2.60 3.10 4.25 1.10 Min. 0.055 0.014 0.013 0.014 0.014 0.173 0.055 0.091 0.114 0.155 0.035 Max. 0.063 0.022 0.020 0.017 0.017 0.181 0.071 0.102 0.122 0.167 0.043 1.50 0.060 0.25 0.010 1 2 3 1. Cathode 2. Anode 3. Gate 5/5