SBP13007-H1

SemiWell Semiconductor SBP13007- H1 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Short storge time - Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ ○ 3.Emitter General Description TO-220 This device is designed for high voltage, high speed switching characteristic,especially suitable for ballast system. 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP ＜ 5 ms ) Base Current Base Peak Current ( tP ＜ 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max. Operating Junction Temperature Value 700 400 9.0 8.0 16 4.0 8.0 80 - 65 ~ 150 150 Units V V V A A A A W °C °C Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value 1.56 62.5 Units °C/W °C/W Aug, 2003. Rev. 3 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 1/6 SBP13007-H1 Electrical Characteristics Symbol ICEV ( TC = 25 °C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA IC = 2.0A IC = 5.0A IC = 8.0A IC = 5.0A IB = 0.4A IB = 1.0A IB = 2.0A IB = 1.0A TC = 100 °C IB = 0.4A IB = 1.0A IB = 1.0A TC = 100 °C VCE = 5V VCE = 5V VCC = 125V IB2 = - 1.0A TC = 100 °C Min - Typ - Max 1.0 5.0 - Units mA VCEO(sus) 400 - V VCE(sat) Collector-Emitter Saturation Voltage - - 0.5 1.0 2.5 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 2.0A IC = 5.0A IC = 5.0A - - 1.2 1.6 1.5 V hFE DC Current Gain IC = 2.0A IC = 5.0A IC = 5.0A IB1 = 1.0A T P = 2 5㎲ VCC = 15V IB1 = 1.0A LC = 0.35mH VCC = 15V IB1= 1.0A LC = 0.35mH 10 5 - 40 40 ts tf Resistive Load Storage Time Fall Time Inductive Load Storage Time Fall Time - 1.3 0.17 2.5 0.4 ㎲ ts tf IC = 5.0A IB2 = -2.5A Vclamp = 300V IC = 5.0A IB2 = -2.5A Vclamp = 300V TC = 100 °C - 0.6 0.06 1.8 0.12 ㎲ ts tf Inductive Load Storage Time Fall Time - 0.8 0.07 2.5 0.15 ㎲ ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2% 2/6 SBP13007-H1 Fig 1. Static Characteristics 12 IB = 2000mA IB = 1600mA IB = 1200mA 8 IB = 1000mA IB = 800mA 6 IB = 600mA IB = 400mA 4 IB = 200mA 45 40 35 Fig 2. DC Current Gain 10 IC, Collector Current [A] hFE, DC Current Gain 30 25 20 15 TJ = 125 C o o TJ = 25 C ※ Notes : 10 5 2 IB = 0mA 0 0 1 2 3 4 5 6 7 8 9 10 0 0.01 VCE = 5V VCE = 1V 0.1 1 10 VCE, Collector-Emitter Voltage [V] IC, Collector Current [A] Fig 3. Collector-Emitter Saturation Voltage 1.2 10 1.1 Fig 4. Base-Emitter Saturation Voltage VCE, Collector-Emitter Voltage [V] VBE, Base-Emitter Voltage [V] 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 TJ = 25 C o 1 TJ = 125 C o 0.1 TJ = 125 C ※ Note : hFE = 5 o TJ = 25 C 0.01 0.1 1 o ※ Note : hFE = 5 10 1 10 IC, Collector Current [A] IC, Collector Current [A] Fig 5. Resistive Load Fall Time 1000 10 Fig 6. Resistive Load Storage Time TJ = 25 C o ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 t, Time [ns] t, Time [us] 100 TJ = 25 C o ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2 10 0 2 4 6 8 10 1 0 1 2 3 4 5 6 7 8 IC, Collector Current [A] IC, Collector Current [A] 3/6 SBP13007-H1 Fig 7. Safe Operation Areas 10 Fig 8. Reverse Biased Safe Operation Areas ※ Notes : TJ ≤ 100 °C IB1 = 2 A RBB = 0 Ω LC = 0.2mH 10 1 10 µs 8 IC, Collector Current [A] 100 µs 10 0 IC, Collector Current [A] 6 VBE(off) -5V 4 DC 500 µs 10 -1 -3V -1.5V ※ Single Pulse 10 -2 1ms 2 10 0 10 1 10 2 10 3 0 100 200 300 400 500 600 700 800 VCE, Collector-Emitter Clamp Voltage [V] VCE, Collector-Emitter Clamp Voltage [V] Fig 9. Power Derating Curve 125 Power Derating Factor (%) 100 75 50 25 0 0 50 100 150 o 200 TC, Case Temperature ( C) 4/6 SBP13007-H1 Inductive Load Switching & RBSOA Test Circuit LC IC IB1 IB VCE D.U.T RBB VBE(off) VClamp VCC Resistive Load Switching Test Circuit RC IC IB1 IB VCE D.U.T RBB VBE(off) VCC 5/6 SBP13007-H1 TO-220 Package Dimension Dim. A B C D E F G H I J K L M N O Min. 9.7 6.3 9.0 12.8 1.2 mm Typ. Max. 10.1 6.7 9.47 13.3 1.4 Min. 0.382 0.248 0.354 0.504 0.047 Inch Typ. Max. 0.398 0.264 0.373 0.524 0.055 1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024 0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142 φ E B A C1.0 H I φ F C M G 1 D 2 3 L 1. Base 2. Collector 3. Emitter N O J K 6/6