SCN2C60

SemiWell Semiconductor SCN2C60 Symbol 2. Gate ○ ○ Sensitive Gate Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 1.5 A ) ◆ Low On-State Voltage (1.2V(Typ.)@ITM) ◆ ▼ 600 ○ 3. Anode 1. Cathode TO-92 General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings Units V A A A A 2s W W A V °C °C Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Half Sine Wave : TC = 45 °C All Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms TA=25°C, Pulse Width ≤ 1.0㎲ TA=25°C, t = 8.3ms 1.0 1.5 15 0.9 2 0.1 1 5.0 - 40 ~ 125 - 40 ~ 150 Oct, 2002. Rev. 2 1/5 Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved. SCN2C60 Electrical Characteristics Symbol Items ( TC = 25 °C unless otherwise noted ) Conditions VAK = VDRM or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 125 °C ( ITM =3 A, Peak ) VAK = 6 V, RL=100 Ω Ratings Min. Typ. Max. 10 200 1.7 Unit IDRM Repetitive Peak Off-State Current Peak On-State Voltage (1) ─ ─ ─ ─ ─ 1.2 ㎂ V VTM IGT Gate Trigger Current (2) TC = 25 °C TC = - 40 °C VD = 7 V, RL=100 Ω ─ ─ ─ ─ 200 500 ㎂ VGT Gate Trigger Voltage (2) TC = 25 °C TC = - 40 °C VAK = 12 V, RL=100 Ω TC = 125 °C VGM = 0.67VDRM, Exponential waveform , RGK = 1000 Ω TJ = 125 °C ITM = 3A, Ig = 10mA VAK = 12 V, Gate Open ─ ─ 0.2 ─ ─ ─ 0.8 1.2 ─ V VGD Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage Critical Rate of Rise On-State Current V dv/dt 200 ─ ─ V/㎲ di/dt 50 A/㎲ IH Holding Current TC = 25 °C TC = - 40 °C Junction to case Junction to Ambient ─ ─ ─ ─ 2 ─ ─ ─ 5.0 10 50 160 mA Rth(j-c) Rth(j-a) Thermal Impedance Thermal Impedance °C/W °C/W ※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. Does not include RGK in measurement. 2/5 SCN2C60 Fig 1. Gate Characteristics 140 10 1 Fig 2. Maximum Case Temperature Max. Allowable Case Temperature [ oC] VGM (5V) 120 100 80 60 40 20 0 0.0 Gate Voltage [V] PGM (2W) PG(AV) (0.1W) IGM (1A) 10 0 θ = 180 π θ 360° 2π o 25 ℃ VGD(0.2V) 10 -1 θ : Conduction Angle 10 -1 10 0 10 1 10 2 10 3 10 4 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate Current [mA] Average On-State Current [A] Fig 3. Typical Forward Voltage 1 Fig 4. Thermal Response 1 TJ = 125 C o Transient Thermal Impedance [Normalized] 1.6 2.0 Instantaneous On-State Current [A] TJ = 25 C 0.1 o 0.1 0.01 0.0 0.4 0.8 1.2 0.01 0.1 1 10 100 1000 10000 Instantaneous On-State Voltage [V] Time (sec) Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature 1.5 1.4 1.3 1.2 1.6 2.0 Fig 6. Typical Gate Trigger Current vs. Junction Temperature VGT (25 oC) IGT (25 C) VGT (t C) IGT (t C) o 1.0 0.9 0.8 0.7 0.6 0.5 -50 0 50 100 o o o 1.1 1.2 0.8 0.4 150 0.0 -50 0 50 100 o 150 Junction Temperature [ C] Junction Temperature [ C] 3/5 SCN2C60 Fig 7. Typical Holding Current 10 9 8 7 6 5 4 3 Fig 8. Power Dissipation 2.0 Max. Average Power Dissipation [W] 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 θ = 30 o θ = 90 θ = 60 o o θ = 120 o θ = 180 o Holding Current [mA] 2 1 -40 -20 0 20 40 60 80 100 120 0.6 0.8 1.0 1.2 Junction Temperature [℃] Average On-State Current [A] 4/5 SCN2C60 TO-92 Package Dimension Dim. A B C D E F G H I J mm Min. Typ. 4.2 3.7 4.43 14.07 4.83 14.87 0.4 4.43 4.83 0.45 2.54 2.54 0.33 0.48 0.013 0.174 0.174 0.554 Max. Min. Inch Typ. 0.165 0.146 0.190 0.585 0.016 0.190 0.017 0.100 0.100 0.019 Max. A E B F C G 1 D 2 3 1. Cathode 2. Gate 3. Anode J H I 5/5