SFF7N60

SemiWell Semiconductor SFF7N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 1.2 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ● 2. Drain 1. Gate ◀ ● ● ▲ 3. Source General Description This Power MOSFET is produced using Semiwell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-220F 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage ( * Drain current limited by junction temperature) Value 600 7.0* 4.4* (Note 1) Parameter Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) Units V A A A V mJ mJ V/ns W W/°C °C °C 28* ±30 420 14.7 4.5 48 0.38 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value Min. - Typ. - Max. 2.6 62.5 Units °C/W °C/W Copyright@Semiwell Semiconductor Inc., All rights reserved. SFF7N60 Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 600V, VGS = 0V VDS = 480V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 3.5A 600 0.6 10 100 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units IGSS On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 1.0 4.0 1.2 V Ω Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 1100 110 12 1500 150 16 pF Dynamic Characteristics Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =480V, VGS =10V, ID =7.0A (Note 4, 5) VDD =300V, ID =7.0A, RG =25Ω (Note 4, 5) 15 30 110 40 28 5 11 40 70 230 90 37 nC ns - Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 15.7mH, IAS =7A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 7A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET IS =7.0A, VGS =0V IS=7.0A, VGS=0V, dIF/dt=100A/us Min. - Typ. 365 3.4 Max. 7.0 28 1.4 - Unit. A V ns uC Copyright@Semiwell Semiconductor Inc., All rights reserved. Typical Characteristics 10 1 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : 10 1 150 C 10 0 o 10 0 25 C -55 C o o 10 -1 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µs Pulse Test 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 5 RDS(ON) [Ω ], Drain-Source On-Resistance VGS = 10V 3 VGS = 20V IDR, Reverse Drain Current [A] 4 10 1 2 10 0 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test 1 ※ Note : TJ = 25℃ 0 0 5 10 15 20 25 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 2000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VGS, Gate-Source Voltage [V] 10 VDS = 120V VDS = 300V 1500 Capacitance [pF] Ciss 8 VDS = 480V 1000 Coss 6 4 500 Crss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 2 ※ Note : ID = 7.0 A 0 -1 10 0 10 0 10 1 0 5 10 15 20 25 30 35 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics (Continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 ※ Notes : 1. VGS = 10 V 2. ID = 3.5 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 8 10 2 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 10 1 10 ms DC 10 0 10 -1 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 10 -2 ID, Drain Current [A] 10 100 µs µs 1 ms 6 4 2 10 10 1 10 2 10 3 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 Zθ JC(t), Thermal Response D = 0 .5 0 .2 10 -1 ※ N o te s : 1 . Z θ J C (t) = 0 .8 5 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e PDM t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve Gate Charge Test Circuit & Waveform 5K 0Ω 1V 2 20F 0n 30F 0n Sm Tp a e ye a DT sU VS D VS G Q g 1V 0 Q g s Q g d VS G DT U 3A m Cag hr e Resistive Switching Test Circuit & Waveforms V D S R G V G S R L V D D V D S 9 0 % 1 0 V D U T V G S 1 0 % t(n d) o t r tn o t(f) df o tf o f t f Unclamped Inductive Switching Test Circuit & Waveforms L V D S I D R G 1 0 V tp BS VS D 1 - I 2 ---------E =-- L S ---------AS A 2 B S -V VS D D D BS VS D IS A V D D I( t D) V D D tp D U T V () Dt S Te i m Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p Package Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) 9.75 ±0.30 MAX1.47 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 15.87 ±0.20