SIM150D06AV1

Preliminary SIM150D06AV1 VCES = 600V Ic=150A VCE(ON) typ. = 1.5V @Ic=150A “HALF-BRIDGE” IGBT MODULE Feature Applications ▪ Smart field stopper +Trench ▪ Motor controls design technology ▪ Low VCE (sat) ▪ Low Turn-off losses ▪ Short tail current for over 20KHz ▪ VVVF inverters ▪ Inverter-type welding MC over 18KHZ ▪ SMPS, Electrolysis ▪ UPS/EPS, Robotics Package : V1 Absolute Maximum Ratings @ Tj=25℃ (Per Leg) Symbol VCES VGES IC ICP IF IFM tp Viso Tj Tstg Weight Md Td Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short circuit test, VGE = 15V, VCC = 360V Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Mounting torque with screw : M5 Terminal connection torque : M5 TC = 25℃ Condition Ratings 600 ± 20 Unit V V A A A A ㎲ V ℃ ℃ g N.m N.m TC = 80℃ (25℃) TC = 25℃ TC = 80℃ (25℃) TC = 25℃ TC = 150℃ (25℃) AC @ 1 minute 150 (210) 300 150 (210) 300 6 (8) 2500 -40 ~ 150 -40 ~ 125 190 2.0 2.0 Static Characteristics @ Tj = 25℃ (unless otherwise specified) Parameters VCE(ON) VGE(th) ICES IGES VF RGINT Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Forward voltage drop Integrated gate resistor ㅡ ㅡ ㅡ Min Typ 1.50 5.8 ㅡ ㅡ 1.6 2 Max 1.95 Unit V Test conditions IC = 150A, VGE = 15V VCE = VGE, IC = 4㎃ 6.5 5.0 400 1.9 ㅡ ㎃ ㎁ V Ω VGE = 0V, VCE = 600V VCE = 0V, VGE = 20V IF = 150A -1- Preliminary SIM150D06AV1 Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified) Parameters Ciss Coss Crss td(on) tr td(off) tf VBR IRM trr Qrr Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Cathode-Anode breakdown Voltage Maximum Reverse Leakage Current Reverse Recovery Time Reverse Recovery Charge Min ㅡ ㅡ ㅡ ㅡ ㅡ ㅡ ㅡ 600 ㅡ ㅡ ㅡ Typ 9200 580 270 125 30 340 60 650 ㅡ 130 6.9 Max ㅡ Unit Test conditions VCE = 25V, VGE = 0V ㅡ ㅡ ㅡ ㅡ pF f = 1 MHz Inductive Switching (125℃) VCC = 300V ns IC = 150A, VGE = ±15V RG = 3.3Ω V ㎂ ns uC VR = 600V IF = 150A, VR = 300V di / dt = 2100A /㎲ ㅡ ㅡ ㅡ 250 ㅡ ㅡ Thermal Characteristics Symbol RΘJC RΘJC RΘCS Parameter Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied) Min - Typ 0.05 Max 0.44 0.77 - Unit ℃/W Fig 1. Typ. IGBT Output Characteristics Fig 2. Typ. IGBT Out Characteristics -2- Preliminary SIM150D06AV1 Fig 3. Typ. Transfer Characteristics Fig 4. Reverse Bias Operating Area Fig 5. Forward Characteristics of Diode Fig 6. Operating Frequency vs Collector Current -3- Preliminary Package Outline (dimensions in mm) SIM150D06AV1 JUNE 2008 Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789 Sales & Marketing clzhang@semwiell.com sales@semiwell.com -4-