SIM200D06AV2

Preliminary SIM200D06AV2 VCES = 600V Ic= 200A VCE(ON) typ. = 1.6V @Ic= 200A “HALF-BRIDGE” IGBT Feature ▪ Smart field stopper +Trench design technology ▪ Low VCE (sat) ▪ Low Turn-off losses ▪ Short tail current for over 20KHz Applications ▪ Motor controls ▪ VVVF inverters ▪ Inverter-type welding MC over 18KHZ ▪ SMPS, Electrolysis ▪ UPS/EPS, Robotics PKG: V2=48mm Absolute Maximum Ratings @ Tj=25℃ (Per Leg) Symbol VCES VGE IC ICP IF IFM tp Viso Weight Tj Tstg Md Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short circuit test, VGE = 15V, VCC = 360V Isolation Voltage test Weight of Module Junction Temperature Storage Temperature Mounting torque with screw : M5 Terminal connection torque : M5 TC = 25℃ Condition Ratings 600 ± 20 Unit V V A A A A ㎲ V g ℃ ℃ N.m N.m TC = 80℃ (25℃) TC = 25℃ TC = 80℃ (25℃) TC = 25℃ TC = 150℃ (25℃) AC @ 1 minute 200 (290) 450 200 (290) 400 6 (8) 2500 190 -40 ~ 150 -40 ~ 125 2.0 2.0 Static Characteristics @ Tj = 25℃ (unless otherwise specified) Parameters VCE(ON) VGE(th) ICES IGES VF RGINT Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Forward voltage drop Integrated gate resistor ㅡ ㅡ ㅡ Min Typ 1.60 5.8 ㅡ ㅡ 1.6 2 Max 1.95 Unit V Test conditions IC = 200A, VGE = 15V VCE = VGE, IC = 4㎃ 6.5 5.0 400 1.9 ㅡ ㎃ ㎁ V Ω VGE= 0V, VCE = 600V VCE = 0V, VGE = 20V IF = 200A -1- Preliminary SIM200D06AV2 Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified) Parameters Ciss Coss Crss td(on) tr td(off) tf VBR IRM trr Qrr Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Cathode-Anode breakdown Voltage Maximum Reverse Leakage Current Reverse Recovery Time Reverse Recovery Charge Min ㅡ ㅡ ㅡ ㅡ ㅡ ㅡ ㅡ 600 ㅡ ㅡ ㅡ Typ 9200 580 270 145 30 340 60 ㅡ ㅡ 130 9 Max ㅡ ㅡ ㅡ ㅡ ㅡ Unit Test conditions VCE = 25V, VGE = 0V f = 1 MHz Inductive Switching (125℃) VCC = 300V pF ns ㅡ ㅡ ㅡ 250 ㅡ ㅡ V ㎂ ns µC VR = 600V IF = 200A, VR = 300V di / dt = 2200A / ㎲ IC = 200A, VGE = ±15V RG = 2Ω Thermal Characteristics Symbol RΘJC RΘJC RΘCS Parameter Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied) Min - Typ 0.025 Max 0.20 0.3 - Unit ℃/W ※ Data and specifications subject to change without any of notice -2- Preliminary Fig.1, Output characteristic (typical) IC = f(TVJ) VGE = 15V SIM200D06AV2 Output characteristic (typical) IC = f(VGE) Tvj = 150℃ Fig.2, Fig.3, Transfer characteristic (typical) IC = f(TVJ) VCE = 20V Fig.4, Reverse bias safe RBSOA) IC = f(VGE) VGE = ±15V, RGoff = 2.4Ω, Tvj = 150℃ Fig.5, Forward characteristic of diode (typical) IF = f(TVJ) -3- Preliminary Package Outline (dimensions in mm) SIM200D06AV2 E2 C1 C2E1 Data and specifications subject to change without any of notice JULY 2008 Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789 Sales & Marketing clzhang@semwiell.com sales@semiwell.com -4-