SIM400D06AV3

Preliminary SIM400D06AV3 VCES = 600V Ic=400A VCE(ON) typ. = 1.6V @Ic=400A “HALF-BRIDGE” IGBT MODULE Feature ▪ Smart field stopper +Trench design technology ▪ Low VCE (sat) ▪ Low Turn-off losses ▪ Short tail current for over 20KHz Applications ▪ Motor controls ▪ VVVF inverters ▪ Inverter-type welding MC over 18KHZ ▪ SMPS, Electrolysis ▪ UPS/EPS, Robotics Package : V3 Absolute Maximum Ratings @ Tj=25℃ (Per Leg) Symbol VCES VGE IC ICP IF IFM tp Viso Weight Tj Tstg Md Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short circuit test, VGE = 15V, VCC = 360V Isolation Voltage test Weight of Module Junction Temperature Storage Temperature Mounting torque with screw : M6 TC = 25℃ Condition Ratings 600 ± 20 Unit V V A A A A ㎲ V g ℃ ℃ N.m TC = 80℃ (25℃) TC = 25℃ TC = 80℃ (25℃) TC = 25℃ TC = 150℃ (25℃) AC @ 1 minute 400 (500) 800 400 (500) 800 6 (8) 2500 360 -40 ~ 150 -40 ~ 125 4.0 Static Characteristics @ Tj = 25℃ (unless otherwise specified) Parameters VCE(ON) VGE(th) ICES IGES VF RGINT Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop Integrated gate resistor ㅡ ㅡ ㅡ ㅡ Min Typ 1.60 5.8 ㅡ ㅡ 1.6 1 Max 1.95 Unit V Test conditions IC = 400A, VGE = 15V VCE = VGE, Ic = 8㎃ 6.5 5.0 400 2.0 ㅡ ㎃ ㎁ V Ω VGE = 0V, VCE = 600V VCE = 0V, VGE = 20V IF = 400A, VGE = 0V -1- Preliminary SIM400D06AV3 Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified) Parameters Ciss Coss Crss td(on) tr td(off) tf VBR IRM trr Qrr Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Cathode-Anode breakdown Voltage Maximum Reverse Leakage Current Reverse Recovery Time Reverse Recovery Charge Min ㅡ ㅡ ㅡ ㅡ ㅡ ㅡ ㅡ 600 ㅡ ㅡ ㅡ Typ 24670 1540 732 145 60 320 80 ㅡ ㅡ 125 20.3 Max ㅡ Unit Test conditions VCE = 25V, VGE = 0V ㅡ ㅡ ㅡ ㅡ pF f = 1 MHz Inductive Switching (125℃) VCC = 300V ns IC = 400A, VGE = ±15V RG = 2.2Ω V ㎂ ns µC VR = 600V IF = 400A, VR = 300V di / dt = 4000A /㎲ ㅡ ㅡ ㅡ 350 ㅡ ㅡ Thermal Characteristics Symbol RΘJC RΘJC RΘCS Parameter Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied) Min - Typ 0.03 Max 0.12 0.22 - Unit ℃/W -2- Preliminary Fig.1, Output characteristic (typical) IC = f(TVJ) VGE = 15V SIM400D06AV3 Fig.2 Output characteristic (typical) IC = f(VGE) Tvj = 150℃ Fig.3, Transfer characteristic (typical) IC = f(TVJ) VCE = 20V Fig.4, Reverse bias RBSOA = VGE ±15V, RGoff = 2.4Ω, Tvj = 150℃ Fig.5, Forward characteristic of diode IF = f(TJ) -3- Preliminary Package Outline (dimensions in mm) SIM400D06AV3 www.semiwell.com JUNE 2008 Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789 Sales & Marketing clzhang@semwiell.com sales@semiwell.com -4-