SIM75D06AV1

Preliminary SIM75D06AV1 VCES = 600V Ic= 75A VCE(ON) typ. = 1.5V @Ic= 75A “HALF-BRIDGE” IGBT MODULE Feature ▪ Smart field stopper +Trench design technology ▪ Low VCE (sat) ▪ Low Turn-off losses ▪ Short tail current for over 20KHz Applications ▪ Motor controls ▪ VVVF inverters ▪ Inverter-type welding MC over 18KHZ ▪ SMPS, Electrolysis ▪ UPS/EPS, Robotics Package : V1 Absolute Maximum Ratings @ Tj=25℃ (Per Leg) Symbol VCES VGES IC ICP IF IFM tp Viso Tj Tstg Weight Md Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short circuit test, VGE = 15V, VCC = 360V Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Mounting torque with screw : M5 Terminal connection torque : M5 TC = 25℃ Condition Ratings 600 ± 20 Unit V V A A A A ㎲ V ℃ ℃ g N.m N.m TC = 80℃ (25℃) TC = 25℃ TC = 80℃ (25℃) TC = 25℃ TC = 150℃ (25℃) AC @ 1 minute 75 (100) 140 75 (100) 140 6 (8) 2500 -40 ~ 150 -40 ~ 125 190 2.0 2.0 Static Characteristics @ Tj = 25℃ (unless otherwise specified) Parameters VCE(ON) VGE(th) ICES IGES VF RGINT Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop Integrated gate resistor ㅡ ㅡ ㅡ Min Typ 1.50 Max Unit V Test conditions IC = 75A, VGE = 15V VCE = VGE, IC = 4㎃ 5.8 ㅡ ㅡ 1.6 4 5.0 400 2.0 ㎃ ㎁ V VGE = 0V, VCE = 600V VCE = 0V, VGE = 20V IF = 75A, VGE = 0V ㅡ ㅡ Ω -1- Preliminary SIM75D06AV1 Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25℃ (unless otherwise specified) Parameters Ciss Coss Crss td(on) tr td(off) tf VRRM IRM trr Qrr Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Maximum Peak Repetitive Reverse Voltage Maximum Reverse leakage current Reverse Recovery Time Reverse Recovery Charge Min ㅡ ㅡ ㅡ ㅡ ㅡ ㅡ ㅡ 600 ㅡ ㅡ ㅡ Typ 4700 300 145 25 18 210 60 ㅡ ㅡ 125 7.6 Max ㅡ Unit Test conditions VCE = 25V , VGE = 0V ㅡ ㅡ ㅡ ㅡ pF f = 1 MHz Inductive Switching (125℃) VCC = 300V ns IC = 75A, VGE = ±15V RG = 1.2Ω V ㎂ ns µC VR = 600V IF = 75A, VR = 300V di / dt = 2000A /㎲ ㅡ ㅡ ㅡ 250 ㅡ ㅡ ※ Data and specifications subject to change without notice. Thermal Characteristics Symbol RΘJC RΘJC RΘCS Parameter Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied) Min - Typ 0.05 Max 0.60 0.98 - Unit ℃/W -2- Preliminary SIM75D06AV1 Fig 1. Typ. IGBT Output Characteristics Fig 2. Typ. IGBT Out Characteristics Fig 3. Typ. Transfer Characteristics Fig 4. Reverse Bias Operating Area Fig 5. Forward Characteristics of Diode Fig 6. Operating Frequency vs Collector Current -3- Preliminary Package Outline (dimensions in mm) SIM75D06AV1 JUNE 2008 Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789 Sales & Marketing clzhang@semwiell.com sales@semiwell.com -4-