STP8A60

SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol STP8A60 ○ 2.T2 Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 8 A ) ◆ High Commutation dv/dt ◆ Non-isolated Type TO-220 ▼ ▲ ○ 3.Gate 1.T1 ○ General Description This devices is suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 105 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 8.0 80/88 32 5.0 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 2.0 Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass Units V A A A2 s W W A V °C °C g Oct, 2002. Rev. 1 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/5 STP8A60 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -4.0 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Ω Gate Trigger Current VD = 6 V, RL=10 Ω Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 12 A, Inst. Measurement Ratings Min. ─ ─ ─ ─ ─ ─ ─ ─ 0.2 10 ─ ─ Typ. ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ 15 ─ Max. 2.0 1.4 30 30 30 1.5 1.5 1.5 ─ ─ ─ 2.0 Unit IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) mA V mA V V V/㎲ mA °C/W 2/5 STP8A60 Fig 1. Gate Characteristics 10 2 Fig 2. On-State Voltage 10 1 VGM (10V) On-State Current [A] Gate Voltage [V] PGM (5W) PG(AV) (0.5W) 25 ℃ 10 0 10 1 TJ = 125 C o IGM (2A) TJ = 25 C 10 0 o 10 -1 VGD (0.2V) 1 10 10 2 10 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 10 9 Fig 4. On State Current vs. Allowable Case Temperature o Power Dissipation [W] 8 7 π θ 360° θ 2π Allowable Case Temperature [ oC] θ = 180 o θ = 150 o θ = 120 θ = 90 θ = 60 o o 130 120 6 5 4 3 2 1 0 0 110 θ : Conduction Angle θ = 30 100 o o θ = 30 o π θ 360° θ 2π 90 θ : Conduction Angle 80 θ = 60 o θ = 90 o θ = 120 o θ = 150 o θ = 180 5 6 7 8 9 10 1 2 RMS On-State Current [A] 3 4 5 6 7 8 9 10 0 1 2 3 4 RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 100 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 Surge On-State Current [A] 80 60Hz V VGT (25 C) VGT (t C) V 1 o 60 + GT1 _ GT1 _ GT3 V 40 50Hz 20 o 0 0 10 10 1 10 2 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/5 STP8A60 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 Fig 8. Transient Thermal Impedance 1 I I + GT1 _ GT1 Transient Thermal Impedance [ C/W] IGT (25 C) IGT (t C) o o o 1 I 0.1 -50 _ GT3 0 50 100 o 150 0.1 -2 10 10 -1 10 0 10 1 10 2 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω 10Ω ▼ ▲ 6V ● A ▼ ▲ RG 6V ● A ▼ ▲ RG 6V ● A V ● V ● V ● RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ 4/5 STP8A60 TO-220 Package Dimension mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O Min. 9.7 6.3 9.0 12.8 1.2 Max. 10.1 6.7 9.47 13.3 1.4 Min. 0.382 0.248 0.354 0.504 0.047 Max. 0.398 0.264 0.373 0.524 0.055 1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.42 0.45 0.7 3.6 3.4 1.4 2.7 5.15 2.6 1.62 0.6 0.9 0.118 0.049 0.094 0.197 0.087 0.056 0.018 0.027 0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.064 0.024 0.035 0.142 φ E B A H I φ F C M G 1 D 2 3 L 1. T1 2. T2 3. Gate N O J K 5/5